Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries

Jui Chin Chen; Wen Ta Tsai

doi:10.1016/j.matchemphys.2004.06.007

Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries

Jui Chin Chen, Wen Ta Tsai

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The roles of H₂O₂ and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H₂O₂ assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1wt.% Al ₂O₃. Atomic force microscopy (AFM) revealed that Al ₂O₃ abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP.

Original language	English
Pages (from-to)	387-393
Number of pages	7
Journal	Materials Chemistry and Physics
Volume	87
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2004.06.007
Publication status	Published - 2004 Oct 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/j.matchemphys.2004.06.007

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title = "Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries",

abstract = "The roles of H2O2 and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H2O2 assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1wt.% Al 2O3. Atomic force microscopy (AFM) revealed that Al 2O3 abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP.",

author = "Chen, {Jui Chin} and Tsai, {Wen Ta}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, for financially supporting this research under Contract No. NSC 89-2216-E-006-077. ",

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T1 - Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries

AU - Chen, Jui Chin

AU - Tsai, Wen Ta

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, for financially supporting this research under Contract No. NSC 89-2216-E-006-077.

PY - 2004/10/15

Y1 - 2004/10/15

N2 - The roles of H2O2 and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H2O2 assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1wt.% Al 2O3. Atomic force microscopy (AFM) revealed that Al 2O3 abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP.

AB - The roles of H2O2 and alumina on the changes of metal removal rate, surface passivation and surface morphology in citric acid (CA) base slurry in simulated Cu chemical-mechanical polishing (CMP) was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicated that H2O2 assisted oxide formation while citric acid promoted anodic dissolution of copper in various slurries that contained 1wt.% Al 2O3. Atomic force microscopy (AFM) revealed that Al 2O3 abrasive particles modified the surface morphology by inducing surface deformation. The results of open circuit potential (OCP) and removal rate measurements clearly demonstrated that there existed a synergistic effect due to the chelating and oxidizing agents in Cu CMP.

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VL - 87

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Effects of hydrogen peroxide and alumina on surface characteristics of copper chemical-mechanical polishing in citric acid slurries

Abstract

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