Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

Meng Hwang Liu; Yeong Her Wang; Mau Phon Houng

doi:10.1109/16.678518

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

Meng Hwang Liu, Yeong Her Wang, Mau Phon Houng

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs BGIT are investigated. The broadening mechanisms due to inelastic scattering are incorporated into the interband tunneling theory. The transmission-andreflection coefficients are calculated with the aid of a three-band model, in which the conduction, light-hole, and split-off bands are coupled with one another. It is found that the inelastic scattering lowers the transmission peak and broadens the full-width at halfmaximum, resulting in the decrease of the tunneling current. The calculated tunneling current due to inelastic scattering is found to have better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio (PVR), we then try to deduce the origin of the valley currents. The thermionic current is included in the valley current to estimate the peak-to-valley current ratio. The thermionic component from the GaSb well has important contribution to the valley current in the studied structures. The peak-to-valley current ratio is also estimated and found to have better agreement with the experiment when the inelastic scattering is considered.

Original language	English
Pages (from-to)	1213-1218
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	6
DOIs	https://doi.org/10.1109/16.678518
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.678518

Cite this

@article{c746e3eb361d4c629cb27e4cfa9d5137,

title = "Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures",

abstract = "Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs BGIT are investigated. The broadening mechanisms due to inelastic scattering are incorporated into the interband tunneling theory. The transmission-andreflection coefficients are calculated with the aid of a three-band model, in which the conduction, light-hole, and split-off bands are coupled with one another. It is found that the inelastic scattering lowers the transmission peak and broadens the full-width at halfmaximum, resulting in the decrease of the tunneling current. The calculated tunneling current due to inelastic scattering is found to have better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio (PVR), we then try to deduce the origin of the valley currents. The thermionic current is included in the valley current to estimate the peak-to-valley current ratio. The thermionic component from the GaSb well has important contribution to the valley current in the studied structures. The peak-to-valley current ratio is also estimated and found to have better agreement with the experiment when the inelastic scattering is considered.",

author = "Liu, {Meng Hwang} and Wang, {Yeong Her} and Houng, {Mau Phon}",

note = "Funding Information: Manuscript received January 22, 1997; revised November 27, 1997. The review of this paper was arranged by Editor J. Xu. This work was supported in part by National Science Council of the Republic of China under Contracts NSC-85-2221-E-006-013 and NSC-86-2221-E-006-030. The authors are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC. Publisher Item Identifier S 0018-9383(98)03662-4.",

year = "1998",

doi = "10.1109/16.678518",

language = "English",

volume = "45",

pages = "1213--1218",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

AU - Liu, Meng Hwang

AU - Wang, Yeong Her

AU - Houng, Mau Phon

N1 - Funding Information: Manuscript received January 22, 1997; revised November 27, 1997. The review of this paper was arranged by Editor J. Xu. This work was supported in part by National Science Council of the Republic of China under Contracts NSC-85-2221-E-006-013 and NSC-86-2221-E-006-030. The authors are with the Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan, ROC. Publisher Item Identifier S 0018-9383(98)03662-4.

PY - 1998

Y1 - 1998

N2 - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs BGIT are investigated. The broadening mechanisms due to inelastic scattering are incorporated into the interband tunneling theory. The transmission-andreflection coefficients are calculated with the aid of a three-band model, in which the conduction, light-hole, and split-off bands are coupled with one another. It is found that the inelastic scattering lowers the transmission peak and broadens the full-width at halfmaximum, resulting in the decrease of the tunneling current. The calculated tunneling current due to inelastic scattering is found to have better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio (PVR), we then try to deduce the origin of the valley currents. The thermionic current is included in the valley current to estimate the peak-to-valley current ratio. The thermionic component from the GaSb well has important contribution to the valley current in the studied structures. The peak-to-valley current ratio is also estimated and found to have better agreement with the experiment when the inelastic scattering is considered.

AB - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs BGIT are investigated. The broadening mechanisms due to inelastic scattering are incorporated into the interband tunneling theory. The transmission-andreflection coefficients are calculated with the aid of a three-band model, in which the conduction, light-hole, and split-off bands are coupled with one another. It is found that the inelastic scattering lowers the transmission peak and broadens the full-width at halfmaximum, resulting in the decrease of the tunneling current. The calculated tunneling current due to inelastic scattering is found to have better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio (PVR), we then try to deduce the origin of the valley currents. The thermionic current is included in the valley current to estimate the peak-to-valley current ratio. The thermionic component from the GaSb well has important contribution to the valley current in the studied structures. The peak-to-valley current ratio is also estimated and found to have better agreement with the experiment when the inelastic scattering is considered.

UR - http://www.scopus.com/inward/record.url?scp=0032097260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032097260&partnerID=8YFLogxK

U2 - 10.1109/16.678518

DO - 10.1109/16.678518

M3 - Article

AN - SCOPUS:0032097260

SN - 0018-9383

VL - 45

SP - 1213

EP - 1218

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this