Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

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Abstract

Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling have been investigated. It is found that the interband tunneling becomes the sequential tunneling dominant due to inelastic scattering, resulting in the reduced transmission peak and the broadened full-width at half maximum. With inelastic scattering, the calculated peak current density is in better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio, we then try to deduce the origin of the valley currents. The thermionic current components including those from GaSb collector and GaSb well are considered to estimate the peak-to-valley current ratio. It is found that the thermionic component from the GaSb well is an important contributor to the valley current. The calculated peak-to-valley current ratio exhibits a similar variation to the experiments.

Original languageEnglish
Pages (from-to)383-393
Number of pages11
JournalMicroelectronic Engineering
Volume43-44
DOIs
Publication statusPublished - 1998 Aug 1

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Resonant tunneling
Inelastic scattering
resonant tunneling
inelastic scattering
valleys
Full width at half maximum
thermionics
Current density
Experiments
indium arsenide
accumulators
current density
estimates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{45261e7918614fe0a943c703416dd54c,
title = "Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures",
abstract = "Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling have been investigated. It is found that the interband tunneling becomes the sequential tunneling dominant due to inelastic scattering, resulting in the reduced transmission peak and the broadened full-width at half maximum. With inelastic scattering, the calculated peak current density is in better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio, we then try to deduce the origin of the valley currents. The thermionic current components including those from GaSb collector and GaSb well are considered to estimate the peak-to-valley current ratio. It is found that the thermionic component from the GaSb well is an important contributor to the valley current. The calculated peak-to-valley current ratio exhibits a similar variation to the experiments.",
author = "Liu, {M. H.} and Yeong-Her Wang and Mau-phon Houng",
year = "1998",
month = "8",
day = "1",
doi = "10.1016/S0167-9317(98)00189-0",
language = "English",
volume = "43-44",
pages = "383--393",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of inelastic scattering on resonant interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

AU - Liu, M. H.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 1998/8/1

Y1 - 1998/8/1

N2 - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling have been investigated. It is found that the interband tunneling becomes the sequential tunneling dominant due to inelastic scattering, resulting in the reduced transmission peak and the broadened full-width at half maximum. With inelastic scattering, the calculated peak current density is in better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio, we then try to deduce the origin of the valley currents. The thermionic current components including those from GaSb collector and GaSb well are considered to estimate the peak-to-valley current ratio. It is found that the thermionic component from the GaSb well is an important contributor to the valley current. The calculated peak-to-valley current ratio exhibits a similar variation to the experiments.

AB - Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling have been investigated. It is found that the interband tunneling becomes the sequential tunneling dominant due to inelastic scattering, resulting in the reduced transmission peak and the broadened full-width at half maximum. With inelastic scattering, the calculated peak current density is in better agreement with the experiments. In addition, as the valley current plays an important role in the peak-to-valley current ratio, we then try to deduce the origin of the valley currents. The thermionic current components including those from GaSb collector and GaSb well are considered to estimate the peak-to-valley current ratio. It is found that the thermionic component from the GaSb well is an important contributor to the valley current. The calculated peak-to-valley current ratio exhibits a similar variation to the experiments.

UR - http://www.scopus.com/inward/record.url?scp=0348200963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348200963&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(98)00189-0

DO - 10.1016/S0167-9317(98)00189-0

M3 - Article

VL - 43-44

SP - 383

EP - 393

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -