Effects of interdiffusion on the band alignment of GeSi dots

J. Wan; Y. H. Luo; Z. M. Jiang; G. Jin; J. L. Liu; Kang L. Wang; X. Z. Liao; J. Zou

doi:10.1063/1.1405152

Effects of interdiffusion on the band alignment of GeSi dots

J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, Kang L. Wang, X. Z. Liao, J. Zou

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

Original language	English
Pages (from-to)	1980-1982
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	13
DOIs	https://doi.org/10.1063/1.1405152
Publication status	Published - 2001 Sept 24

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1405152

Cite this

@article{0513552850a242bb8871b31264ee8c0d,

title = "Effects of interdiffusion on the band alignment of GeSi dots",

abstract = "The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.",

author = "J. Wan and Luo, {Y. H.} and Jiang, {Z. M.} and G. Jin and Liu, {J. L.} and Wang, {Kang L.} and Liao, {X. Z.} and J. Zou",

year = "2001",

month = sep,

day = "24",

doi = "10.1063/1.1405152",

language = "English",

volume = "79",

pages = "1980--1982",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

}

TY - JOUR

T1 - Effects of interdiffusion on the band alignment of GeSi dots

AU - Wan, J.

AU - Luo, Y. H.

AU - Jiang, Z. M.

AU - Jin, G.

AU - Liu, J. L.

AU - Wang, Kang L.

AU - Liao, X. Z.

AU - Zou, J.

PY - 2001/9/24

Y1 - 2001/9/24

N2 - The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

AB - The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

UR - http://www.scopus.com/inward/record.url?scp=0035943890&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035943890&partnerID=8YFLogxK

U2 - 10.1063/1.1405152

DO - 10.1063/1.1405152

M3 - Article

AN - SCOPUS:0035943890

SN - 0003-6951

VL - 79

SP - 1980

EP - 1982

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Effects of interdiffusion on the band alignment of GeSi dots

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this