Effects of interdiffusion on the band alignment of GeSi dots

J. Wan, Y. H. Luo, Z. M. Jiang, G. Jin, J. L. Liu, Kang L. Wang, X. Z. Liao, J. Zou

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29 Citations (Scopus)


The interdiffusion effects on the band alignment of the GeSi dots embedded in Si matrix were studied by temperature- and excitation-power-dependent photoluminescence measurements. A different power-dependent behavior of the photoluminescence for the as-grown and the annealed samples was observed. It was suggested that the band alignments of the dots changed from type II to type I after annealing due to the Ge/Si interdiffusion. The decrease of the valence band offset, which was also induced by the Ge/Si interdiffusion, was observed from the temperature-dependent photoluminescence measurements.

Original languageEnglish
Pages (from-to)1980-1982
Number of pages3
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2001 Sep 24

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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