Effects of interracial oxide layer for the Ta2O5 capacitor after high-temperature annealing

Jiann Shing Lee, Shi Chung Sun, Shoou Jinn Chang, Jone F. Chen, Chun Hsing Liu, Uang Heay Liaw

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Thin Ta2O5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O2 ambient at various temperatures. It was found that the leakage current of the Ta2O5/SiOx capacitor was controlled by the Ta2O5 layer when the annealing temperature was lower than 700°C. On the other hand, the leakage current was controlled by the interracial oxide layer when the annealing temperature was higher than 700°C. It was also found that we could achieve an equivalent thin oxide thickness and a small leakage current at the same time from the Ta2O5/SiOx capacitor with a suitable thermal annealing treatment.

Original languageEnglish
Pages (from-to)690-693
Number of pages4
JournalJapanese Journal of Applied Physics
Volume41
Issue number2 A
DOIs
Publication statusPublished - 2002 Feb

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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