Effects of last barrier thickness on the hot-cold factor of GaN-based light-emitting diodes

Qiuping Luan; Kin Tak Lam; Shoou Jinn Chang

doi:10.1117/1.JPE.5.057602

Effects of last barrier thickness on the hot-cold factor of GaN-based light-emitting diodes

Qiuping Luan, Kin Tak Lam, Shoou Jinn Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

The study of thermal properties for GaN-based light-emitting diodes (LEDs) with various last barrier thicknesses was reported. It was found that the LED output power decreased as we increased the thickness of the last barrier. It was also found that the LED output powers decrease with the increase of temperature for the LEDs with 12-, 24-, and 48-nm-thick last barriers. However, it was found that the LED output power increases with the increase of temperature for the LED with a 72-nm-thick last barrier due to the fact that more holes could enter the multiquantum well active region at elevated temperatures. Furthermore, it was found that the output power decreased by 0.15%/°C, 0.15%/°C, and 0.11%/°C for the LEDs with 12-, 24-, and 48-nm-thick last barriers, respectively, but increased by 0.09%/°C for the LED with a 72-nm-thick last barrier.

Original language	English
Article number	057602
Journal	Journal of Photonics for Energy
Volume	5
Issue number	1
DOIs	https://doi.org/10.1117/1.JPE.5.057602
Publication status	Published - 2015 Jan 1

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1117/1.JPE.5.057602

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title = "Effects of last barrier thickness on the hot-cold factor of GaN-based light-emitting diodes",

abstract = "The study of thermal properties for GaN-based light-emitting diodes (LEDs) with various last barrier thicknesses was reported. It was found that the LED output power decreased as we increased the thickness of the last barrier. It was also found that the LED output powers decrease with the increase of temperature for the LEDs with 12-, 24-, and 48-nm-thick last barriers. However, it was found that the LED output power increases with the increase of temperature for the LED with a 72-nm-thick last barrier due to the fact that more holes could enter the multiquantum well active region at elevated temperatures. Furthermore, it was found that the output power decreased by 0.15%/°C, 0.15%/°C, and 0.11%/°C for the LEDs with 12-, 24-, and 48-nm-thick last barriers, respectively, but increased by 0.09%/°C for the LED with a 72-nm-thick last barrier.",

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N2 - The study of thermal properties for GaN-based light-emitting diodes (LEDs) with various last barrier thicknesses was reported. It was found that the LED output power decreased as we increased the thickness of the last barrier. It was also found that the LED output powers decrease with the increase of temperature for the LEDs with 12-, 24-, and 48-nm-thick last barriers. However, it was found that the LED output power increases with the increase of temperature for the LED with a 72-nm-thick last barrier due to the fact that more holes could enter the multiquantum well active region at elevated temperatures. Furthermore, it was found that the output power decreased by 0.15%/°C, 0.15%/°C, and 0.11%/°C for the LEDs with 12-, 24-, and 48-nm-thick last barriers, respectively, but increased by 0.09%/°C for the LED with a 72-nm-thick last barrier.

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Effects of last barrier thickness on the hot-cold factor of GaN-based light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

UN SDGs

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