Abstract
In this paper, lithium (Li) doping on the performance of solution processed zinc oxide (ZnO) thin film transistors (TFTs). However, the ZnO TFTs showed good electric characteristic of Ion/Ioff ratio over 105 with reasonable field-effect Mobility of 1.5 cm2/V s.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 18th International Display Workshops 2011, IDW'11 |
| Pages | 173-176 |
| Number of pages | 4 |
| Volume | 1 |
| Publication status | Published - 2011 |
| Event | 18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 2011 Dec 7 → 2011 Dec 9 |
Other
| Other | 18th International Display Workshops 2011, IDW 2011 |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 11-12-07 → 11-12-09 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
Cite this
}
Effects of Li doping on the performance of solution processed ZnO thin film transistors. / Su, Bo Yuan; Chu, Sheng-Yuan; Juang, Yung Der.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. Vol. 1 2011. p. 173-176.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of Li doping on the performance of solution processed ZnO thin film transistors
AU - Su, Bo Yuan
AU - Chu, Sheng-Yuan
AU - Juang, Yung Der
PY - 2011
Y1 - 2011
N2 - In this paper, lithium (Li) doping on the performance of solution processed zinc oxide (ZnO) thin film transistors (TFTs). However, the ZnO TFTs showed good electric characteristic of Ion/Ioff ratio over 105 with reasonable field-effect Mobility of 1.5 cm2/V s.
AB - In this paper, lithium (Li) doping on the performance of solution processed zinc oxide (ZnO) thin film transistors (TFTs). However, the ZnO TFTs showed good electric characteristic of Ion/Ioff ratio over 105 with reasonable field-effect Mobility of 1.5 cm2/V s.
UR - http://www.scopus.com/inward/record.url?scp=84870675058&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870675058&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84870675058
SN - 9781622761906
VL - 1
SP - 173
EP - 176
BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11
ER -