Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

Bo Yuan Su, Sheng-Yuan Chu, Yung Der Juang, Ssu Yin Liu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

Original languageEnglish
Pages (from-to)10-14
Number of pages5
JournalJournal of Alloys and Compounds
Volume580
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Thin film transistors
Magnesium
Thermodynamic stability
Amorphous films
Doping (additives)
Sol-gel process
Carrier concentration
Oxygen
Electrons

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{c26b1cd9486e47ef89dd0ee8c1d38cfc,
title = "Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors",
abstract = "The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.{\%})) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.{\%} Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.",
author = "Su, {Bo Yuan} and Sheng-Yuan Chu and Juang, {Yung Der} and Liu, {Ssu Yin}",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.jallcom.2013.05.077",
language = "English",
volume = "580",
pages = "10--14",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",

}

Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors. / Su, Bo Yuan; Chu, Sheng-Yuan; Juang, Yung Der; Liu, Ssu Yin.

In: Journal of Alloys and Compounds, Vol. 580, 01.01.2013, p. 10-14.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

AU - Su, Bo Yuan

AU - Chu, Sheng-Yuan

AU - Juang, Yung Der

AU - Liu, Ssu Yin

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

AB - The effects of magnesium (Mg) doping (molar ratio Mg/Zn = (0-10 at.%)) on solution-processed amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) grown using the sol-gel method are investigated. TFT devices fabricated with Mg-doped films showed an improved field-effect mobility of 2.35 cm2/V s and a subthreshold slope (S) of 0.42 V/dec compared to those of an undoped a-IGZO TFT (0.73 cm2/V s and 0.74 V/dec, respectively), and an on-off current ratio of over 106. Moreover, the 5 at.% Mg-doped TFT device showed improved gate bias and thermal stability due to fewer oxygen deficiencies, smaller carrier concentration, and less interface electron trapping in the a-IGZO films.

UR - http://www.scopus.com/inward/record.url?scp=84878493950&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878493950&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2013.05.077

DO - 10.1016/j.jallcom.2013.05.077

M3 - Article

AN - SCOPUS:84878493950

VL - 580

SP - 10

EP - 14

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

ER -