Abstract
ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.
Original language | English |
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Article number | 113709 |
Journal | Journal of Applied Physics |
Volume | 103 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2008 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy