TY - JOUR
T1 - Effects of Mn2+ on the electrical resistance of electrolessly plated Ni-P thin-film and its application as embedded resistor
AU - Zhou, Guoyun
AU - Chen, Chia Yun
AU - Lin, Ziyin
AU - Li, Liyi
AU - Tao, Zhihua
AU - He, Wei
AU - Wong, Ching Ping
N1 - Funding Information:
Acknowledgments The authors would like to thank the financial support from China Scholarship Committee (CSC).
PY - 2014/3
Y1 - 2014/3
N2 - The effects of manganese sulfate monohydrate (denoted as MSM) on the properties of electroless Ni-P thin-film were investigated. The properties of Ni-P thin-film were examined by means of atomic force microscopy (AFM), cyclic voltammetry, scanning electron microscopy (SEM), X-ray diffraction, energy-dispersive X-ray spectrometer and X-ray photoelectron spectroscopy. AFM and SEM results showed that MSM had significant influences on the morphology, including the formation of smaller nodules, nano-size particles boundaries on both surface and inside of nodules. Due to the specific topologies, the resistance of Ni-P thin-film deposited with MSM was increased. Based on the characterization results, we summarized that the Mn2+ or Mn 2+-compound were primarily confirmed to act as the stabilizer in Ni-P electroless process. Moreover, the verification test for Ni-P thin-film in application as embedded resistor was carried out through electrical, thermal stability examination by means of current-voltage (I-V), temperature coefficient of resistance and thermal shock tests, respectively. Experiment results demonstrated the Ni-P thin-film deposited with MSM is qualified for embedded resistors.
AB - The effects of manganese sulfate monohydrate (denoted as MSM) on the properties of electroless Ni-P thin-film were investigated. The properties of Ni-P thin-film were examined by means of atomic force microscopy (AFM), cyclic voltammetry, scanning electron microscopy (SEM), X-ray diffraction, energy-dispersive X-ray spectrometer and X-ray photoelectron spectroscopy. AFM and SEM results showed that MSM had significant influences on the morphology, including the formation of smaller nodules, nano-size particles boundaries on both surface and inside of nodules. Due to the specific topologies, the resistance of Ni-P thin-film deposited with MSM was increased. Based on the characterization results, we summarized that the Mn2+ or Mn 2+-compound were primarily confirmed to act as the stabilizer in Ni-P electroless process. Moreover, the verification test for Ni-P thin-film in application as embedded resistor was carried out through electrical, thermal stability examination by means of current-voltage (I-V), temperature coefficient of resistance and thermal shock tests, respectively. Experiment results demonstrated the Ni-P thin-film deposited with MSM is qualified for embedded resistors.
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U2 - 10.1007/s10854-014-1732-6
DO - 10.1007/s10854-014-1732-6
M3 - Article
AN - SCOPUS:84894680129
SN - 0957-4522
VL - 25
SP - 1341
EP - 1347
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 3
ER -