TY - JOUR
T1 - Effects of Nb doping on switching-voltage stability of zinc oxide thin films
AU - Li, Cheng Ying
AU - Lin, Chun Cheng
AU - Chu, Sheng Yuan
AU - Lin, Jun Ting
AU - Huang, Chih Yu
AU - Hong, Cheng Shong
N1 - Funding Information:
This work was supported by the Ministry of Science and Technology, Taiwan, under Grant Nos. MOST 107-2218-E-492-006 and 108-2218-E-006-013. The authors would like to thank Mr. Patrick Sinclair Wyton of Academic English Services, Taiwan, for his assistance in editing and proofreading this paper.
Publisher Copyright:
© 2020 Author(s).
PY - 2020/11/7
Y1 - 2020/11/7
N2 - Nb-doped ZnO (NbxZn1-xO, NZO) thin films with various Nb additions (x = 0, 0.2, 0.5, and 0.8 at. %) were deposited on Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering. The Nb doping concentration was found to affect the microstructure, the number of oxygen vacancies, and work function of the Pt/NZO/Pt structures. Among the various devices, the film with 0.5 at. % Nb addition showed a better switching-voltage stability [i.e., the optimal coefficient of variation (Cv) for reset (7.02%) and set (2.73%) operations, respectively], a high endurance (∼1000 cycles), and lower reset (0.57 V) and set (1.83 V) voltages due to a larger number of oxygen vacancies and a lower work function. In general, the results show that the present NZO thin films are promising candidates for stable and low power-consumption resistive random access memory applications.
AB - Nb-doped ZnO (NbxZn1-xO, NZO) thin films with various Nb additions (x = 0, 0.2, 0.5, and 0.8 at. %) were deposited on Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering. The Nb doping concentration was found to affect the microstructure, the number of oxygen vacancies, and work function of the Pt/NZO/Pt structures. Among the various devices, the film with 0.5 at. % Nb addition showed a better switching-voltage stability [i.e., the optimal coefficient of variation (Cv) for reset (7.02%) and set (2.73%) operations, respectively], a high endurance (∼1000 cycles), and lower reset (0.57 V) and set (1.83 V) voltages due to a larger number of oxygen vacancies and a lower work function. In general, the results show that the present NZO thin films are promising candidates for stable and low power-consumption resistive random access memory applications.
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U2 - 10.1063/1.5140027
DO - 10.1063/1.5140027
M3 - Article
AN - SCOPUS:85096104930
SN - 0021-8979
VL - 128
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 17
M1 - 175308
ER -