Effects of Ni in Strontium Titanate Nickelate Thin Films for Flexible Nonvolatile Memory Applications

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Dei Wei Chou, Te Kung Chiang, Yeong Her Wang

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Abstract

This paper investigated the performance of flexible resistive random access memory devices based on simple spin-coated sol-gel-derived strontium titanate nickelate (STN) thin films on polyethylene terephthalate substrate. A high on/off ratio of 105 and a uniform current distribution were demonstrated. The strong bonding between bidentate ligands of nickel (II) acetylacetone and titanium metal ion enabled the chelation effect, which contributed to the stability of the STN thin film, especially for moisture resistivity. Fourier transform infrared spectroscopy analysis was utilized to examine the effects on the resistive switching behaviors after 90 days under an atmospheric environment according to the chelation effect of the STN thin films. The devices were fabricated on a flexible plastic substrate, and they exhibited excellent durability upon repeated bending tests. They demonstrated good potential application for flexible and low-cost memory devices.

Original languageEnglish
Article number7812657
Pages (from-to)2001-2007
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number5
DOIs
Publication statusPublished - 2017 May 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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