Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalJournal of Crystal Growth
Volume290
Issue number1
DOIs
Publication statusPublished - 2006 Apr 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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