Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

S. H. Hsu; W. R. Chen; Y. K. Su; R. W. Chuang; S. J. Chang; W. C. Chen

doi:10.1016/j.jcrysgro.2005.12.078

Effects of nitrogen incorporation on the electronic properties of Ga _xIn_1-xN_yAs_1-y epilayers probed by persistent photoconductivity

S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

Original language	English
Pages (from-to)	87-90
Number of pages	4
Journal	Journal of Crystal Growth
Volume	290
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.078
Publication status	Published - 2006 Apr 15

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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@article{6704a48de07a4a50bc69d04075342dc1,

title = "Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity",

abstract = "The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.",

author = "Hsu, {S. H.} and Chen, {W. R.} and Su, {Y. K.} and Chuang, {R. W.} and Chang, {S. J.} and Chen, {W. C.}",

note = "Funding Information: The authors would like to thank Shipley Company for providing MO sources. This work was supported by the Ministry of Education Program for Promoting Academic Excellence of Universities, Taiwan, R.O.C. under the Grant A-91-E-FA08-1-4. ",

year = "2006",

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doi = "10.1016/j.jcrysgro.2005.12.078",

language = "English",

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pages = "87--90",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Effects of nitrogen incorporation on the electronic properties of Ga xIn1-xNyAs1-y epilayers probed by persistent photoconductivity

AU - Hsu, S. H.

AU - Chen, W. R.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Chang, S. J.

AU - Chen, W. C.

N1 - Funding Information: The authors would like to thank Shipley Company for providing MO sources. This work was supported by the Ministry of Education Program for Promoting Academic Excellence of Universities, Taiwan, R.O.C. under the Grant A-91-E-FA08-1-4.

PY - 2006/4/15

Y1 - 2006/4/15

N2 - The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

AB - The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.

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