Abstract
The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures.
Original language | English |
---|---|
Pages (from-to) | 87-90 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 290 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 Apr 15 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry