Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages931-932
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10-07-2510-07-30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Chiu, C. J., Chang, S. P., Lu, C. Y., Su, P. Y., & Chang, S. J. (2011). Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 931-932). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666682