Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

C. J. Chiu; S. P. Chang; C. Y. Lu; P. Y. Su; S. J. Chang

doi:10.1063/1.3666682

Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm ²/Vs) while maintaining good substrate swing and good I _on/I _off.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	931-932
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666682
Publication status	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: 2010 Jul 25 → 2010 Jul 30

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	10-07-25 → 10-07-30

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3666682

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Chiu, C. J., Chang, S. P., Lu, C. Y., Su, P. Y., & Chang, S. J. (2011). Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 931-932). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666682

@inproceedings{25f4534f401241dda31ab2374c2ec986,

title = "Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors",

abstract = "The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.",

author = "Chiu, {C. J.} and Chang, {S. P.} and Lu, {C. Y.} and Su, {P. Y.} and Chang, {S. J.}",

year = "2011",

doi = "10.1063/1.3666682",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "931--932",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

}

Chiu, CJ, Chang, SP, Lu, CY, Su, PY & Chang, SJ 2011, Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 931-932, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 10-07-25. https://doi.org/10.1063/1.3666682

Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors. / Chiu, C. J.; Chang, S. P.; Lu, C. Y. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 931-932 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

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AU - Chang, S. P.

AU - Lu, C. Y.

AU - Su, P. Y.

AU - Chang, S. J.

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N2 - The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.

AB - The authors report the fabrication of high performance a-IGZO thin film transistors (TFTs) with polymer gate dielectric prepared by spin-coating on a glass substrate. It was found that transmittance of the deposited polymer film was larger than 90% at 600 nm. It was also found that the a-IGZO TFT prepared with 0.14% oxygen partial pressure with annealing could provide us a higher mobility (i.e.,17.5cm 2/Vs) while maintaining good substrate swing and good I on/I off.

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BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Effects of oxygen contents in the active channel layer on electrical characteristics of IGZO-based thin film transistors

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