Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

C. T. Lin; Y. K. Su; H. T. Huang; S. J. Chang; G. S. Chen; T. P. Sun; J. J. Luo

Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, J. J. Luo

Research output: Contribution to conference › Paper › peer-review

Abstract

Experimental results are presented for noise voltage and responsivity for a HgCdTe photoconductive detector. Hg_0.8Cd_0.2Te photoconductive detector passivated with Zns/photo-enhanced native oxide shown an improved noise spectral density relative to detector passivated with only ZnS. The low frequency 1/f noise charges have been measured in Hg_0.8Cd_0.2Te photo detector as a function of bias and the effective insulator trap density from the 1/f noise charges was determined at 77 K. It was illustrated that the insulator effective trap densities of stacked passivation and only ZnS passivation are close to 4×10¹⁷ and 9×10¹⁷ cm^-2 eV¹ at 0.4 V bias with 1 msec integration time, respectively. We find that the numerical values of 1/f noise are strongly dependent upon surface passivation properties. From responsivity measurement, it is clear that the sweepout effect is only important at high electrical field. Finally, it is evident that these photo detectors, which passivated with stacked dielectric layers may be useful for focal plane array.

Original language	English
Pages	168-174
Number of pages	7
Publication status	Published - 1997
Event	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia Duration: 1996 Nov 26 → 1996 Nov 28

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Other	Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
City	Penang, Malaysia
Period	96-11-26 → 96-11-28

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

@conference{d79b9be455764acba140bd0245c0cbf6,

title = "Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector",

abstract = "Experimental results are presented for noise voltage and responsivity for a HgCdTe photoconductive detector. Hg0.8Cd0.2Te photoconductive detector passivated with Zns/photo-enhanced native oxide shown an improved noise spectral density relative to detector passivated with only ZnS. The low frequency 1/f noise charges have been measured in Hg0.8Cd0.2Te photo detector as a function of bias and the effective insulator trap density from the 1/f noise charges was determined at 77 K. It was illustrated that the insulator effective trap densities of stacked passivation and only ZnS passivation are close to 4×1017 and 9×1017 cm-2 eV1 at 0.4 V bias with 1 msec integration time, respectively. We find that the numerical values of 1/f noise are strongly dependent upon surface passivation properties. From responsivity measurement, it is clear that the sweepout effect is only important at high electrical field. Finally, it is evident that these photo detectors, which passivated with stacked dielectric layers may be useful for focal plane array.",

author = "Lin, {C. T.} and Su, {Y. K.} and Huang, {H. T.} and Chang, {S. J.} and Chen, {G. S.} and Sun, {T. P.} and Luo, {J. J.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE ; Conference date: 26-11-1996 Through 28-11-1996",

year = "1997",

language = "English",

pages = "168--174",

}

TY - CONF

T1 - Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

AU - Lin, C. T.

AU - Su, Y. K.

AU - Huang, H. T.

AU - Chang, S. J.

AU - Chen, G. S.

AU - Sun, T. P.

AU - Luo, J. J.

PY - 1997

Y1 - 1997

N2 - Experimental results are presented for noise voltage and responsivity for a HgCdTe photoconductive detector. Hg0.8Cd0.2Te photoconductive detector passivated with Zns/photo-enhanced native oxide shown an improved noise spectral density relative to detector passivated with only ZnS. The low frequency 1/f noise charges have been measured in Hg0.8Cd0.2Te photo detector as a function of bias and the effective insulator trap density from the 1/f noise charges was determined at 77 K. It was illustrated that the insulator effective trap densities of stacked passivation and only ZnS passivation are close to 4×1017 and 9×1017 cm-2 eV1 at 0.4 V bias with 1 msec integration time, respectively. We find that the numerical values of 1/f noise are strongly dependent upon surface passivation properties. From responsivity measurement, it is clear that the sweepout effect is only important at high electrical field. Finally, it is evident that these photo detectors, which passivated with stacked dielectric layers may be useful for focal plane array.

AB - Experimental results are presented for noise voltage and responsivity for a HgCdTe photoconductive detector. Hg0.8Cd0.2Te photoconductive detector passivated with Zns/photo-enhanced native oxide shown an improved noise spectral density relative to detector passivated with only ZnS. The low frequency 1/f noise charges have been measured in Hg0.8Cd0.2Te photo detector as a function of bias and the effective insulator trap density from the 1/f noise charges was determined at 77 K. It was illustrated that the insulator effective trap densities of stacked passivation and only ZnS passivation are close to 4×1017 and 9×1017 cm-2 eV1 at 0.4 V bias with 1 msec integration time, respectively. We find that the numerical values of 1/f noise are strongly dependent upon surface passivation properties. From responsivity measurement, it is clear that the sweepout effect is only important at high electrical field. Finally, it is evident that these photo detectors, which passivated with stacked dielectric layers may be useful for focal plane array.

UR - http://www.scopus.com/inward/record.url?scp=0030707312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030707312&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030707312

SP - 168

EP - 174

T2 - Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE

Y2 - 26 November 1996 through 28 November 1996

ER -

Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

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