Effects of phosphorus implantation on the activation of magnesium doped in GaN

Kuan Ting Liu, Shoou Jinn Chang, Sean Wu

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant concentration ratio and annealing conditions. This phenomenon is attributable to the reduction in selfcompensation that results from the formation of deep donors and the enhanced Mg atom activation, which is in reasonable agreement with the optical properties observed by photoluminescence measurements. In addition, a new photoluminescence peak resulting from P-related transitions is also observed, evidently owing to the recombination of electrons from the shallow native donors with holes previously captured by isoelectronic P traps.

Original languageEnglish
Pages (from-to)810031-810034
Number of pages4
JournalJapanese journal of applied physics
Volume48
Issue number8 Part 1
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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