Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n+-type doped GaAs

Y. G. Sung, S. J. Chiou, D. P. Wang, Y. T. Lu, K. F. Huang, T. C. Huang

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The electroreflectance (ER) spectra of a surface-intrinsic n+-type doped (100) GaAs have been measured at various polarization angles of the probe beam. Several Franz-Keldysh oscillations were observed above the band-gap energy, thus enabling heavy- and light-hole transitions to be separated by the application of the fast Fourier transform to the ER spectra. From this, the ratios of the amplitudes of the light- to heavy-hole transitions versus angle of polarization were obtained. At a large incident angle (80°), the strength of the field of the probe beam in the normal direction of the sample (Fz) was varied from zero to a larger component. It was found that the ratios increased with increasing Fz which is consistent with the theory that the light-hole transition becomes more enhanced with z-polarized light.

Original languageEnglish
Pages (from-to)78-80
Number of pages3
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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