Abstract
The influences of post Cu chemical-mechanical-polish cleaning time on time dependent dielectric breakdown (TDDB) and electro-migration (EM) are reported. Cu residue remaining on the porous-low-k (pLK) film surface between Cu lines is a significant factor in TDDB lifetime when the cleaning time is short. In contrast, a longer cleaning time generates low Cu residue on the pLK surface but results in high Cu surface roughness, which leads to TDDB degradation. For EM performance, slightly higher roughness could improve the adhesion of the dielectric barrier layer to the Cu surface, thus increasing its mean time to failure. Further increases in Cu surface roughness, caused by extended cleaning, may generate a seam in the dielectric barrier layer at the deep-recessed trench area. The seam degrades the adhesion strength of the dielectric barrier to Cu and is the initiating site of Cu migration. As a result, it significantly degrades the EM lifetime.
| Original language | English |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 158 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2011 Oct 18 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
Cite this
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Effects of post-CMP cleaning on time dependent dielectric breakdown and electro-migration in porous low-kCu interconnects. / Hsu, Chia Lin; Perng, Dung-Ching; Lin, Wen Chin; Lu, Kuan Ting; Tsai, Teng Chun; Huang, Climbing; Wu, J. Y.
In: Journal of the Electrochemical Society, Vol. 158, No. 11, 18.10.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of post-CMP cleaning on time dependent dielectric breakdown and electro-migration in porous low-kCu interconnects
AU - Hsu, Chia Lin
AU - Perng, Dung-Ching
AU - Lin, Wen Chin
AU - Lu, Kuan Ting
AU - Tsai, Teng Chun
AU - Huang, Climbing
AU - Wu, J. Y.
PY - 2011/10/18
Y1 - 2011/10/18
N2 - The influences of post Cu chemical-mechanical-polish cleaning time on time dependent dielectric breakdown (TDDB) and electro-migration (EM) are reported. Cu residue remaining on the porous-low-k (pLK) film surface between Cu lines is a significant factor in TDDB lifetime when the cleaning time is short. In contrast, a longer cleaning time generates low Cu residue on the pLK surface but results in high Cu surface roughness, which leads to TDDB degradation. For EM performance, slightly higher roughness could improve the adhesion of the dielectric barrier layer to the Cu surface, thus increasing its mean time to failure. Further increases in Cu surface roughness, caused by extended cleaning, may generate a seam in the dielectric barrier layer at the deep-recessed trench area. The seam degrades the adhesion strength of the dielectric barrier to Cu and is the initiating site of Cu migration. As a result, it significantly degrades the EM lifetime.
AB - The influences of post Cu chemical-mechanical-polish cleaning time on time dependent dielectric breakdown (TDDB) and electro-migration (EM) are reported. Cu residue remaining on the porous-low-k (pLK) film surface between Cu lines is a significant factor in TDDB lifetime when the cleaning time is short. In contrast, a longer cleaning time generates low Cu residue on the pLK surface but results in high Cu surface roughness, which leads to TDDB degradation. For EM performance, slightly higher roughness could improve the adhesion of the dielectric barrier layer to the Cu surface, thus increasing its mean time to failure. Further increases in Cu surface roughness, caused by extended cleaning, may generate a seam in the dielectric barrier layer at the deep-recessed trench area. The seam degrades the adhesion strength of the dielectric barrier to Cu and is the initiating site of Cu migration. As a result, it significantly degrades the EM lifetime.
UR - http://www.scopus.com/inward/record.url?scp=80054037186&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80054037186&partnerID=8YFLogxK
U2 - 10.1149/2.033111jes
DO - 10.1149/2.033111jes
M3 - Article
AN - SCOPUS:80054037186
VL - 158
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 11
ER -