Effects of post-deposition CdCl2 annealing on electronic properties of CdTe solar cells

Sanjoy Paul; Sandeep Sohal; Craig Swartz; Deng Bing Li; Sandip S. Bista; Corey R. Grice; Yanfa Yan; Mark Holtz; Jian V. Li

doi:10.1016/j.solener.2020.10.015

Effects of post-deposition CdCl₂ annealing on electronic properties of CdTe solar cells

Sanjoy Paul, Sandeep Sohal, Craig Swartz, Deng Bing Li, Sandip S. Bista, Corey R. Grice, Yanfa Yan, Mark Holtz, Jian V. Li

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of post-deposition CdCl₂ annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl₂ annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380–430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. The best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

Original language	English
Pages (from-to)	938-948
Number of pages	11
Journal	Solar Energy
Volume	211
DOIs	https://doi.org/10.1016/j.solener.2020.10.015
Publication status	Published - 2020 Nov 15

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Materials Science(all)

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10.1016/j.solener.2020.10.015

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title = "Effects of post-deposition CdCl2 annealing on electronic properties of CdTe solar cells",

abstract = "The effects of post-deposition CdCl2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380–430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. The best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.",

author = "Sanjoy Paul and Sandeep Sohal and Craig Swartz and Li, {Deng Bing} and Bista, {Sandip S.} and Grice, {Corey R.} and Yanfa Yan and Mark Holtz and Li, {Jian V.}",

note = "Funding Information: The presented material in this manuscript is based upon the work supported by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO) Agreement Number DE-EE0007541. J.V. Li acknowledges current funding from Ministry of Science and Technology, Taiwan, under grant number MOST 107-2218-E-006-022-MY3. Funding Information: The presented material in this manuscript is based upon the work supported by the U.S. Department of Energy{\textquoteright}s Office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO) Agreement Number DE-EE0007541. J.V. Li acknowledges current funding from Ministry of Science and Technology, Taiwan, under grant number MOST 107-2218-E-006-022-MY3. Publisher Copyright: {\textcopyright} 2020 International Solar Energy Society",

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doi = "10.1016/j.solener.2020.10.015",

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AU - Paul, Sanjoy

AU - Sohal, Sandeep

AU - Swartz, Craig

AU - Li, Deng Bing

AU - Bista, Sandip S.

AU - Grice, Corey R.

AU - Yan, Yanfa

AU - Holtz, Mark

AU - Li, Jian V.

N1 - Funding Information: The presented material in this manuscript is based upon the work supported by the U.S. Department of Energy's Office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO) Agreement Number DE-EE0007541. J.V. Li acknowledges current funding from Ministry of Science and Technology, Taiwan, under grant number MOST 107-2218-E-006-022-MY3. Funding Information: The presented material in this manuscript is based upon the work supported by the U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy (EERE) under Solar Energy Technologies Office (SETO) Agreement Number DE-EE0007541. J.V. Li acknowledges current funding from Ministry of Science and Technology, Taiwan, under grant number MOST 107-2218-E-006-022-MY3. Publisher Copyright: © 2020 International Solar Energy Society

PY - 2020/11/15

Y1 - 2020/11/15

N2 - The effects of post-deposition CdCl2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380–430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. The best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

AB - The effects of post-deposition CdCl2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380–430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. The best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

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Effects of post-deposition CdCl₂ annealing on electronic properties of CdTe solar cells

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