Effects of precursor flow rates on characteristics of low-k SiOC(H) film deposited by plasma-enhanced chemical vapor deposition

Yi Lung Cheng, Chiao Wei Huang, Chung Ren Sun, Wen Hsi Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, low-dielectric constant (low-k) SiOC(H) films deposited using conventional plasma-enhanced chemical vapor deposition (PECVD) by varying flow rates of the deposition precursors were investigated through various characterization techniques. The used deposition precursors were DEMS and ATRP, which acted as a network matrix and a sacrificial porogen, respectively. Experimental results indicate that the flow rates of both DEMS and ATRT precursors influenced the properties of the resulting porous low-k SiOC(H) films, but the former caused a larger impact. For porous low-k SiOC(H) films deposited with an increase of DEMS flow rate, an enhanced cross-linking was formed, leading to a higher hardness, smaller pore size, better electric performance, and stronger dielectric breakdown strength. However, a higher dielectric constant (k) was the cost. The k values of porous low-k SiOC(H) films with various ATRP flow rates (1700-2500 sccm) remained unchanged, although, the optimized electrical characteristics and reliability were obtained as ATRP flow rate was 2100 sccm.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 7
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
EditorsY. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
PublisherElectrochemical Society Inc.
Pages253-268
Number of pages16
Edition2
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Publication series

NameECS Transactions
Number2
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16-05-2916-06-02

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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