Abstract
Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.
Original language | English |
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Pages (from-to) | 2589-2592 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 4 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2007 |
Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics