Effects of proton irradiation on electrical and optical properties of n-InN

V. V. Emtsev; V. Yu Davydov; A. A. Klochikhin; A. V. Sakharov; A. N. Smirnov; V. V. Kozlovskii; C. L. Wu; C. H. Shen; S. Gwo

doi:10.1002/pssc.200674802

Effects of proton irradiation on electrical and optical properties of n-InN

V. V. Emtsev, V. Yu Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C. L. Wu, C. H. Shen, S. Gwo

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 10¹⁸ cm^-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

Original language	English
Pages (from-to)	2589-2592
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200674802
Publication status	Published - 2007 Dec 1
Event	International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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title = "Effects of proton irradiation on electrical and optical properties of n-InN",

abstract = "Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.",

author = "Emtsev, {V. V.} and Davydov, {V. Yu} and Klochikhin, {A. A.} and Sakharov, {A. V.} and Smirnov, {A. N.} and Kozlovskii, {V. V.} and Wu, {C. L.} and Shen, {C. H.} and S. Gwo",

year = "2007",

month = dec,

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language = "English",

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journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "International Workshop on Nitride Semiconductors, IWN 2006 ; Conference date: 22-10-2006 Through 27-10-2006",

}

Effects of proton irradiation on electrical and optical properties of n-InN. / Emtsev, V. V.; Davydov, V. Yu; Klochikhin, A. A.; Sakharov, A. V.; Smirnov, A. N.; Kozlovskii, V. V.; Wu, C. L.; Shen, C. H.; Gwo, S.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2589-2592.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Effects of proton irradiation on electrical and optical properties of n-InN

AU - Emtsev, V. V.

AU - Davydov, V. Yu

AU - Klochikhin, A. A.

AU - Sakharov, A. V.

AU - Smirnov, A. N.

AU - Kozlovskii, V. V.

AU - Wu, C. L.

AU - Shen, C. H.

AU - Gwo, S.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

AB - Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

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DO - 10.1002/pssc.200674802

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SP - 2589

EP - 2592

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

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T2 - International Workshop on Nitride Semiconductors, IWN 2006

Y2 - 22 October 2006 through 27 October 2006

ER -