Effects of proton irradiation on electrical and optical properties of n-InN

V. V. Emtsev, V. Yu Davydov, A. A. Klochikhin, A. V. Sakharov, A. N. Smirnov, V. V. Kozlovskii, C. L. Wu, C. H. Shen, S. Gwo

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.

Original languageEnglish
Pages (from-to)2589-2592
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
Publication statusPublished - 2007 Dec 1
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 2006 Oct 222006 Oct 27

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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