Abstract
Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.
| Original language | English |
|---|---|
| Pages (from-to) | 2589-2592 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 4 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
| Event | International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan Duration: 2006 Oct 22 → 2006 Oct 27 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
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Effects of proton irradiation on electrical and optical properties of n-InN. / Emtsev, V. V.; Davydov, V. Yu; Klochikhin, A. A.; Sakharov, A. V.; Smirnov, A. N.; Kozlovskii, V. V.; Wu, C. L.; Shen, C. H.; Gwo, S.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 4, No. 7, 01.12.2007, p. 2589-2592.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Effects of proton irradiation on electrical and optical properties of n-InN
AU - Emtsev, V. V.
AU - Davydov, V. Yu
AU - Klochikhin, A. A.
AU - Sakharov, A. V.
AU - Smirnov, A. N.
AU - Kozlovskii, V. V.
AU - Wu, C. L.
AU - Shen, C. H.
AU - Gwo, S.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.
AB - Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.
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U2 - 10.1002/pssc.200674802
DO - 10.1002/pssc.200674802
M3 - Conference article
AN - SCOPUS:49749120607
VL - 4
SP - 2589
EP - 2592
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7
ER -