Effects of proton irradiation on the optical and electrical properties of n-InN with charge carrier concentrations of 2 - 5 × 1018 cm-3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n-InN are discussed. Proton irradiation of n-InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n-InN after proton irradiation leads to the conclusion that these irradiation-produced donors are native defects, most likely vacancies on the nitrogen sublattice.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2007 Dec 1|
|Event||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
Duration: 2006 Oct 22 → 2006 Oct 27
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics