Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes

Y. H. Wang; M. P. Houng; P. W. Sze; J. F. Chen; A. Y. Cho

doi:10.1063/1.351050

Effects of Sb₄/Ga ratios on the electrical properties of GaSb Schottky diodes

Y. H. Wang, M. P. Houng, P. W. Sze, J. F. Chen, A. Y. Cho

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Abstract

Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb₄/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb₄/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb₄/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3×10¹⁴ to 1.2×10¹⁵ states/cm²/eV corresponding to Sb₄/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb₄/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.

Original language	English
Pages (from-to)	2760-2764
Number of pages	5
Journal	Journal of Applied Physics
Volume	71
Issue number	6
DOIs	https://doi.org/10.1063/1.351050
Publication status	Published - 1992

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.351050

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title = "Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes",

abstract = "Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3×1014 to 1.2×1015 states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.",

author = "Wang, {Y. H.} and Houng, {M. P.} and Sze, {P. W.} and Chen, {J. F.} and Cho, {A. Y.}",

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TY - JOUR

T1 - Effects of Sb4/Ga ratios on the electrical properties of GaSb Schottky diodes

AU - Wang, Y. H.

AU - Houng, M. P.

AU - Sze, P. W.

AU - Chen, J. F.

AU - Cho, A. Y.

PY - 1992

Y1 - 1992

N2 - Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3×1014 to 1.2×1015 states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.

AB - Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3×1014 to 1.2×1015 states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.

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Effects of Sb₄/Ga ratios on the electrical properties of GaSb Schottky diodes

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