TY - JOUR
T1 - Effects of selenization process on densification and microstructure of Cu(In,Ga)Se2 thin film prepared by doctor blading of CIGS nanoparticles
AU - Sun, Man Ting
AU - Yang, Chang Ting
AU - Wu, Yu Chien
AU - Hsiang, Hsing I.
N1 - Funding Information:
This work was financially supported by the Ministry of Science and Technology, Taiwan ( 103-2623-E-006–011-ET ).
Publisher Copyright:
© 2018 Elsevier Ltd and Techna Group S.r.l.
PY - 2018/11
Y1 - 2018/11
N2 - Flaws, such as porous structure and small grains easily occur during Cu(In,Ga)Se2 (CIGS) thin film absorber preparation from nanocrystallites have been the major obstacle to practical application of this technology. The selenization process parameter effects on the densification, microstructure, and electrical properties were investigated in this study using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and Hall-effect analyzer. Grain size was observed nearly independent of the selenization time but increased with increasing selenium mass in the graphite box for selenized CIGS film at 500 °C. Pre-sintering at 2 bar N2 atmosphere overpressure can effectively suppress the in-plane tensile stress generated by the shrinkage mismatch between the CIGS and Mo-coated glass substrate during 500 °C sintering, leading to better densification. The pre-sintered and selenized CIGS film exhibited good electrical properties suitable for solar cell applications.
AB - Flaws, such as porous structure and small grains easily occur during Cu(In,Ga)Se2 (CIGS) thin film absorber preparation from nanocrystallites have been the major obstacle to practical application of this technology. The selenization process parameter effects on the densification, microstructure, and electrical properties were investigated in this study using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and Hall-effect analyzer. Grain size was observed nearly independent of the selenization time but increased with increasing selenium mass in the graphite box for selenized CIGS film at 500 °C. Pre-sintering at 2 bar N2 atmosphere overpressure can effectively suppress the in-plane tensile stress generated by the shrinkage mismatch between the CIGS and Mo-coated glass substrate during 500 °C sintering, leading to better densification. The pre-sintered and selenized CIGS film exhibited good electrical properties suitable for solar cell applications.
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U2 - 10.1016/j.ceramint.2018.08.047
DO - 10.1016/j.ceramint.2018.08.047
M3 - Article
AN - SCOPUS:85051083516
SN - 0272-8842
VL - 44
SP - 20508
EP - 20513
JO - Ceramics International
JF - Ceramics International
IS - 16
ER -