Effects of SiO 2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures

Chang Fu Han, Yi Zhe Guo, Chung Jen Chung, Chang Hong Shen, Jen Fin Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the present study, the experimental results of the thermally induced failure (fracture) time for the components of copper through‑silicon via (TSV) structures and the time for electrical current breakdown (T BD ) are obtained to investigate the effects of the thickness of the SiO 2 film and the operating temperature. The numerical scheme is also developed to solve the distributions of transient temperature and stress in the specimen and the equivalent stress/strain for the elements in the Ti, SiO 2 and Si components of the TSV structure. The equivalent element stress solutions incorporating with the Johnson-Cook (J-C) fracture model are provided to identify the earliest failure element and time in each of these three components and the T BD of the structure via the definition for the D factor. The applied models and numerical scheme are confirmed to be trustworthy from the comparison of the numerically predicted and experimental results for these failure time parameters. The effects of the operating temperature of specimen's bottom surface and the film thickness of SiO 2 on these time parameters have been evaluated precisely. The T BD time is elongated by increasing the thickness of either SiO 2 or Ti film if the bottom surface is operating at a fixed temperature. The earliest failure time (t failure ) for the components of Ti, SiO 2 and Si wafer and the T BD are always reduced by the rise of operating temperature.

Original languageEnglish
Pages (from-to)1-13
Number of pages13
JournalMicroelectronics Reliability
Volume83
DOIs
Publication statusPublished - 2018 Apr 1

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Silicon
operating temperature
Film thickness
film thickness
silicon
Temperature
temperature
Copper
breakdown
wafers
copper

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{b4b1d77d8a0741aba440c7087b2d6eb9,
title = "Effects of SiO 2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures",
abstract = "In the present study, the experimental results of the thermally induced failure (fracture) time for the components of copper through‑silicon via (TSV) structures and the time for electrical current breakdown (T BD ) are obtained to investigate the effects of the thickness of the SiO 2 film and the operating temperature. The numerical scheme is also developed to solve the distributions of transient temperature and stress in the specimen and the equivalent stress/strain for the elements in the Ti, SiO 2 and Si components of the TSV structure. The equivalent element stress solutions incorporating with the Johnson-Cook (J-C) fracture model are provided to identify the earliest failure element and time in each of these three components and the T BD of the structure via the definition for the D factor. The applied models and numerical scheme are confirmed to be trustworthy from the comparison of the numerically predicted and experimental results for these failure time parameters. The effects of the operating temperature of specimen's bottom surface and the film thickness of SiO 2 on these time parameters have been evaluated precisely. The T BD time is elongated by increasing the thickness of either SiO 2 or Ti film if the bottom surface is operating at a fixed temperature. The earliest failure time (t failure ) for the components of Ti, SiO 2 and Si wafer and the T BD are always reduced by the rise of operating temperature.",
author = "Han, {Chang Fu} and Guo, {Yi Zhe} and Chung, {Chung Jen} and Shen, {Chang Hong} and Lin, {Jen Fin}",
year = "2018",
month = "4",
day = "1",
doi = "10.1016/j.microrel.2018.02.006",
language = "English",
volume = "83",
pages = "1--13",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",

}

Effects of SiO 2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures . / Han, Chang Fu; Guo, Yi Zhe; Chung, Chung Jen; Shen, Chang Hong; Lin, Jen Fin.

In: Microelectronics Reliability, Vol. 83, 01.04.2018, p. 1-13.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of SiO 2 film thickness and operating temperature on thermally-induced failures in through-silicon-via structures

AU - Han, Chang Fu

AU - Guo, Yi Zhe

AU - Chung, Chung Jen

AU - Shen, Chang Hong

AU - Lin, Jen Fin

PY - 2018/4/1

Y1 - 2018/4/1

N2 - In the present study, the experimental results of the thermally induced failure (fracture) time for the components of copper through‑silicon via (TSV) structures and the time for electrical current breakdown (T BD ) are obtained to investigate the effects of the thickness of the SiO 2 film and the operating temperature. The numerical scheme is also developed to solve the distributions of transient temperature and stress in the specimen and the equivalent stress/strain for the elements in the Ti, SiO 2 and Si components of the TSV structure. The equivalent element stress solutions incorporating with the Johnson-Cook (J-C) fracture model are provided to identify the earliest failure element and time in each of these three components and the T BD of the structure via the definition for the D factor. The applied models and numerical scheme are confirmed to be trustworthy from the comparison of the numerically predicted and experimental results for these failure time parameters. The effects of the operating temperature of specimen's bottom surface and the film thickness of SiO 2 on these time parameters have been evaluated precisely. The T BD time is elongated by increasing the thickness of either SiO 2 or Ti film if the bottom surface is operating at a fixed temperature. The earliest failure time (t failure ) for the components of Ti, SiO 2 and Si wafer and the T BD are always reduced by the rise of operating temperature.

AB - In the present study, the experimental results of the thermally induced failure (fracture) time for the components of copper through‑silicon via (TSV) structures and the time for electrical current breakdown (T BD ) are obtained to investigate the effects of the thickness of the SiO 2 film and the operating temperature. The numerical scheme is also developed to solve the distributions of transient temperature and stress in the specimen and the equivalent stress/strain for the elements in the Ti, SiO 2 and Si components of the TSV structure. The equivalent element stress solutions incorporating with the Johnson-Cook (J-C) fracture model are provided to identify the earliest failure element and time in each of these three components and the T BD of the structure via the definition for the D factor. The applied models and numerical scheme are confirmed to be trustworthy from the comparison of the numerically predicted and experimental results for these failure time parameters. The effects of the operating temperature of specimen's bottom surface and the film thickness of SiO 2 on these time parameters have been evaluated precisely. The T BD time is elongated by increasing the thickness of either SiO 2 or Ti film if the bottom surface is operating at a fixed temperature. The earliest failure time (t failure ) for the components of Ti, SiO 2 and Si wafer and the T BD are always reduced by the rise of operating temperature.

UR - http://www.scopus.com/inward/record.url?scp=85044309052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044309052&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.02.006

DO - 10.1016/j.microrel.2018.02.006

M3 - Article

AN - SCOPUS:85044309052

VL - 83

SP - 1

EP - 13

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -