Effects of SiO2 and B2O3 on electrical properties of low-temperature sintered ZnO–Bi2O3 varistors

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Abstract

This study utilized a conventional solid-state reaction method to prepare ZnO–Bi2O3–Sb2O3–Co3O4–Mn3O4–Nb2O5 varistors sintered at low temperatures of 860 °C–880 °C. The effects of the different amounts of SiO2 and SiO2-B2O3 co-doping on the microstructure and varistor properties were investigated. The nonlinearity coefficient (α) increased from 51 for the sample without adding SiO2 to 66 for the sample with 1.0wt% SiO2, and the breakdown voltage increased from 834 to 1260 V/mm. However, with excess SiO2 addition, the α value gradually decreased from 66 for the sample with 1 wt% SiO2 to 52 for the sample with 2.0 wt% SiO2, while the breakdown voltage continued to increase. Co-doping SiO2–B2O3 improves liquid phase sintering due to the relatively low melting point of SiO2–B2O3–Bi2O3 additives. The α value increased from 66 for the sample without adding B2O3 to 83 for the sample with 2.0 wt% B2O3, while the breakdown voltage decreased from 1260 to 1120 V/mm. In comparison to higher temperature alternatives, the lower sintering temperatures (860 °C–880 °C) used in this study result in lower energy consumption during the manufacturing process. Because of their favorable cost-energy efficiency ratio, the SiO2–B2O3 co-doped ZnO–Bi2O3 varistors emerge as promising candidates for large-scale production.

Original languageEnglish
Article number92
JournalJournal of Materials Science: Materials in Electronics
Volume35
Issue number1
DOIs
Publication statusPublished - 2024 Jan

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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