TY - JOUR
T1 - Effects of sodium incorporation in Co-evaporated Cu2ZnSnSe 4 thin-film solar cells
AU - Li, Jian V.
AU - Kuciauskas, Darius
AU - Young, Matthew R.
AU - Repins, Ingrid L.
N1 - Funding Information:
This research was supported by the U.S. Department of Energy under Contract No. DE-AC36-08GO28308 to NREL. The authors thank Carolyn Beall and Clay DeHart of NREL for film growth and Pat Dippo for PL measurement.
PY - 2013/4/22
Y1 - 2013/4/22
N2 - Sodium incorporation into Cu2ZnSnSe4 (CZTSe) substantially improves the device efficiency by enhancing the open-circuit voltage (VOC) and fill factor. Sodium increases hole density, makes the acceptor shallower, shifts the Fermi level lower, and leads to higher built-in voltage and, consequently, higher VOC. Sodium reduces the concentration of certain deep recombination centers, which further benefits VOC. The increase of hole density and mobility enhances the CZTSe conductivity leading to higher fill factor. Sodium causes smaller depletion width, hence, lower short-circuit current. The minority-carrier lifetime decreases slightly after sodium is incorporated via the Mo-coated soda-lime glass, although adding NaF provides some amelioration.
AB - Sodium incorporation into Cu2ZnSnSe4 (CZTSe) substantially improves the device efficiency by enhancing the open-circuit voltage (VOC) and fill factor. Sodium increases hole density, makes the acceptor shallower, shifts the Fermi level lower, and leads to higher built-in voltage and, consequently, higher VOC. Sodium reduces the concentration of certain deep recombination centers, which further benefits VOC. The increase of hole density and mobility enhances the CZTSe conductivity leading to higher fill factor. Sodium causes smaller depletion width, hence, lower short-circuit current. The minority-carrier lifetime decreases slightly after sodium is incorporated via the Mo-coated soda-lime glass, although adding NaF provides some amelioration.
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U2 - 10.1063/1.4802972
DO - 10.1063/1.4802972
M3 - Article
AN - SCOPUS:84876993556
SN - 0003-6951
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 16
M1 - 163905
ER -