Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

Jiann Shing Jeng, Chin Hung Liu, Jen-Sue Chen

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Abstract

Hf-N films were sputtered in an Ar + N2 atmosphere, with different substrate biases (0 to -200 V) at various nitrogen flow ratios (N2% = 0-5%). The resistivity, composition, crystal structure, and reflectance of Hf-N films were examined. The resistivity of Hf-N films deposited at 0% nitrogen flow ratio decreases with increasing substrate bias. In addition, the resistivity of -200 V biased Hf-N films increases to a limited extent with increasing nitrogen flow ratio, whereas the resistivity of zero- and -100 V biased films increases abruptly with an increasing nitrogen flow ratio of up to 5%. The zero- and -100 V biased Hf-N films display a hafnium oxide phase when film is deposited at a 5% N2 flow ratio, while Hf-N films deposited at -200 V bias show a HfN phase. The reflectance of zero- and -100 V biased films deposited at 5% N2 flow ratio shows a significant interference hump in the visible region. In addition, the reflectance edge of Hf-N films is related to the density of the conduction electron. The connection among resistivity, composition, crystal structure, and reflectance and how they are influenced by the substrate bias and nitrogen flow ratio is discussed.

Original languageEnglish
Pages (from-to)649-652
Number of pages4
JournalJournal of Alloys and Compounds
Volume486
Issue number1-2
DOIs
Publication statusPublished - 2009 Nov 3

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Hafnium
Nitrides
Nitrogen
Crystal structure
Substrates
Chemical analysis
Hafnium oxides

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{ed023e58261a46fba6049ee5db3ce916,
title = "Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film",
abstract = "Hf-N films were sputtered in an Ar + N2 atmosphere, with different substrate biases (0 to -200 V) at various nitrogen flow ratios (N2{\%} = 0-5{\%}). The resistivity, composition, crystal structure, and reflectance of Hf-N films were examined. The resistivity of Hf-N films deposited at 0{\%} nitrogen flow ratio decreases with increasing substrate bias. In addition, the resistivity of -200 V biased Hf-N films increases to a limited extent with increasing nitrogen flow ratio, whereas the resistivity of zero- and -100 V biased films increases abruptly with an increasing nitrogen flow ratio of up to 5{\%}. The zero- and -100 V biased Hf-N films display a hafnium oxide phase when film is deposited at a 5{\%} N2 flow ratio, while Hf-N films deposited at -200 V bias show a HfN phase. The reflectance of zero- and -100 V biased films deposited at 5{\%} N2 flow ratio shows a significant interference hump in the visible region. In addition, the reflectance edge of Hf-N films is related to the density of the conduction electron. The connection among resistivity, composition, crystal structure, and reflectance and how they are influenced by the substrate bias and nitrogen flow ratio is discussed.",
author = "Jeng, {Jiann Shing} and Liu, {Chin Hung} and Jen-Sue Chen",
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TY - JOUR

T1 - Effects of substrate bias and nitrogen flow ratio on the resistivity, composition, crystal structure, and reflectance of reactively sputtered hafnium-nitride film

AU - Jeng, Jiann Shing

AU - Liu, Chin Hung

AU - Chen, Jen-Sue

PY - 2009/11/3

Y1 - 2009/11/3

N2 - Hf-N films were sputtered in an Ar + N2 atmosphere, with different substrate biases (0 to -200 V) at various nitrogen flow ratios (N2% = 0-5%). The resistivity, composition, crystal structure, and reflectance of Hf-N films were examined. The resistivity of Hf-N films deposited at 0% nitrogen flow ratio decreases with increasing substrate bias. In addition, the resistivity of -200 V biased Hf-N films increases to a limited extent with increasing nitrogen flow ratio, whereas the resistivity of zero- and -100 V biased films increases abruptly with an increasing nitrogen flow ratio of up to 5%. The zero- and -100 V biased Hf-N films display a hafnium oxide phase when film is deposited at a 5% N2 flow ratio, while Hf-N films deposited at -200 V bias show a HfN phase. The reflectance of zero- and -100 V biased films deposited at 5% N2 flow ratio shows a significant interference hump in the visible region. In addition, the reflectance edge of Hf-N films is related to the density of the conduction electron. The connection among resistivity, composition, crystal structure, and reflectance and how they are influenced by the substrate bias and nitrogen flow ratio is discussed.

AB - Hf-N films were sputtered in an Ar + N2 atmosphere, with different substrate biases (0 to -200 V) at various nitrogen flow ratios (N2% = 0-5%). The resistivity, composition, crystal structure, and reflectance of Hf-N films were examined. The resistivity of Hf-N films deposited at 0% nitrogen flow ratio decreases with increasing substrate bias. In addition, the resistivity of -200 V biased Hf-N films increases to a limited extent with increasing nitrogen flow ratio, whereas the resistivity of zero- and -100 V biased films increases abruptly with an increasing nitrogen flow ratio of up to 5%. The zero- and -100 V biased Hf-N films display a hafnium oxide phase when film is deposited at a 5% N2 flow ratio, while Hf-N films deposited at -200 V bias show a HfN phase. The reflectance of zero- and -100 V biased films deposited at 5% N2 flow ratio shows a significant interference hump in the visible region. In addition, the reflectance edge of Hf-N films is related to the density of the conduction electron. The connection among resistivity, composition, crystal structure, and reflectance and how they are influenced by the substrate bias and nitrogen flow ratio is discussed.

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