Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

Re Ching Lin, Ying Chung Chen, Po Tsung Hsieh, Kuo Sheng Kao, Chih Ming Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

Original languageEnglish
Title of host publication2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Pages695-698
Number of pages4
DOIs
Publication statusPublished - 2007
Event2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS - Geneva, Switzerland
Duration: 2007 May 292007 Jun 1

Publication series

NameProceedings of the IEEE International Frequency Control Symposium and Exposition

Conference

Conference2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Country/TerritorySwitzerland
CityGeneva
Period07-05-2907-06-01

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator'. Together they form a unique fingerprint.

Cite this