Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

Re Ching Lin; Ying Chung Chen; Po Tsung Hsieh; Kuo Sheng Kao; Chih Ming Wang

doi:10.1109/FREQ.2007.4319164

Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

Re Ching Lin, Ying Chung Chen, Po Tsung Hsieh, Kuo Sheng Kao, Chih Ming Wang

Center for Micro/Nano Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

Original language	English
Title of host publication	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Pages	695-698
Number of pages	4
DOIs	https://doi.org/10.1109/FREQ.2007.4319164
Publication status	Published - 2007
Event	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS - Geneva, Switzerland Duration: 2007 May 29 → 2007 Jun 1

Publication series

Name	Proceedings of the IEEE International Frequency Control Symposium and Exposition

Conference

Conference	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Country/Territory	Switzerland
City	Geneva
Period	07-05-29 → 07-06-01

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1109/FREQ.2007.4319164

Cite this

Lin, R. C., Chen, Y. C., Hsieh, P. T., Kao, K. S., & Wang, C. M. (2007). Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator. In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS (pp. 695-698). Article 4319164 (Proceedings of the IEEE International Frequency Control Symposium and Exposition). https://doi.org/10.1109/FREQ.2007.4319164

@inproceedings{06b3e756a9234c5c94e2b8651d43a5c3,

title = "Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator",

abstract = "The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.",

author = "Lin, {Re Ching} and Chen, {Ying Chung} and Hsieh, {Po Tsung} and Kao, {Kuo Sheng} and Wang, {Chih Ming}",

year = "2007",

doi = "10.1109/FREQ.2007.4319164",

language = "English",

isbn = "1424406463",

series = "Proceedings of the IEEE International Frequency Control Symposium and Exposition",

pages = "695--698",

booktitle = "2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS",

note = "2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS ; Conference date: 29-05-2007 Through 01-06-2007",

}

Lin, RC, Chen, YC, Hsieh, PT, Kao, KS & Wang, CM 2007, Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator. in 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS., 4319164, Proceedings of the IEEE International Frequency Control Symposium and Exposition, pp. 695-698, 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS, Geneva, Switzerland, 07-05-29. https://doi.org/10.1109/FREQ.2007.4319164

Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator. / Lin, Re Ching; Chen, Ying Chung; Hsieh, Po Tsung et al.
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS. 2007. p. 695-698 4319164 (Proceedings of the IEEE International Frequency Control Symposium and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Lin, Re Ching

AU - Chen, Ying Chung

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N2 - The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

AB - The high-tone bulk acoustic resonator (HBAR), consisted of a Mo/ZnO/Pt/Ti/Si structure, is fabricated. The thickness of Si substrate under HBAR is controlled by a twostep process of wet- and dry-etching. The resonance frequency spacing (Δf) of HBAR is dependent on the etching duration. The frequency response of the HBAR is measured using an HP8720 network analyzer and a CASCADE probe station. The estimation of Si residue based on the high-tone resonant phenomenon coincides with practical measurements. A frequency response with no harmonic resonance, which is an extreme case of HBAR without Si residue, is revealed. Furthermore, a sensor of high-frequency bulk acoustic wave resonator is obtained.

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Lin RC, Chen YC, Hsieh PT, Kao KS, Wang CM. Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator. In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS. 2007. p. 695-698. 4319164. (Proceedings of the IEEE International Frequency Control Symposium and Exposition). doi: 10.1109/FREQ.2007.4319164

Effects of substrate residue on the frequency response of high-tone bulk acoustic resonator

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