Effects of sulfurization and Cu/In ratio on the performance of the CuInS2 solar cell

Chia Hung Tsai, Dillip Kumar Mishra, Chia Ying Su, Jyh Ming Ting

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

SUMMARY: Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550°C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub-bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500°C-sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed.

Original languageEnglish
Pages (from-to)418-428
Number of pages11
JournalInternational Journal of Energy Research
Volume38
Issue number4
DOIs
Publication statusPublished - 2014 Mar 25

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Solar cells
Thin films
Defects
Gas mixtures
Surface morphology
Quartz
Photoluminescence
Furnaces
Energy gap
Surface roughness
Fabrication
Microstructure
Processing
Temperature
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Nuclear Energy and Engineering
  • Fuel Technology
  • Energy Engineering and Power Technology

Cite this

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abstract = "SUMMARY: Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550°C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub-bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29{\%} was obtained from the 500°C-sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed.",
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Effects of sulfurization and Cu/In ratio on the performance of the CuInS2 solar cell. / Tsai, Chia Hung; Mishra, Dillip Kumar; Su, Chia Ying; Ting, Jyh Ming.

In: International Journal of Energy Research, Vol. 38, No. 4, 25.03.2014, p. 418-428.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of sulfurization and Cu/In ratio on the performance of the CuInS2 solar cell

AU - Tsai, Chia Hung

AU - Mishra, Dillip Kumar

AU - Su, Chia Ying

AU - Ting, Jyh Ming

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N2 - SUMMARY: Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550°C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub-bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500°C-sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed.

AB - SUMMARY: Photovoltaic CuInS2 (CIS) thin films were prepared from thermally evaporated Cu/In precursors, having various Cu/In ratios, under different sulfurization conditions. The sulfurization was carried out in a quartz tube furnace under a steady or flowing H2S/Ar gas mixture at various temperatures ranging from 450 to 550°C. The effects of the Cu/In ratio and sulfurization condition on the grain size, surface morphology, surface roughness, microstructure and defect formation of the resulting CIS films were examined. It was found that the effects depend on the processing conditions. Particularly, we show that sub-bandgap generated defects can be inferred by photoluminescence data. Selected CIS thin films were used as absorber layers for the fabrication of thin film solar cells. The best solar cell efficiency of 6.29% was obtained from the 500°C-sulfurized absorber layer having a Cu/In ratio of 1.8. Effect of absorber layer characteristics on the cell efficiency was also discussed.

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