Effects of surface treatment and annealing on properties of InN layers grown using metal organic chemical vapor deposition

Sheng Po Chang, Kuan Jen Chen, Po Jui Kuo, Yu Zung Chiou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the effects surface treatment and annealing had on the properties of InN layers grown using metal organic chemical vapor deposition (MOCVD). The number of defects due to N vacancies decreased significantly with increasing annealing temperature. However, when the annealing temperature reached 700°C, the crystalline grain became larger on the film surfaces. Annealing at an appropriate temperature improved the crystalline quality and the electrical properties of the InN films. However, when the annealing temperature was too high, InN oxidized and even dissociated.

Original languageEnglish
Title of host publicationFrontiers of Manufacturing and Design Science III
Pages190-196
Number of pages7
EditionPART 1
DOIs
Publication statusPublished - 2013
Event3rd International Conference on Frontiers of Manufacturing and Design Science, ICFMD 2012 - , Hong Kong
Duration: 2012 Dec 112012 Dec 13

Publication series

NameApplied Mechanics and Materials
NumberPART 1
Volume271
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other3rd International Conference on Frontiers of Manufacturing and Design Science, ICFMD 2012
Country/TerritoryHong Kong
Period12-12-1112-12-13

All Science Journal Classification (ASJC) codes

  • General Engineering

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