Effects of temperature on niobium-doped MgZnO films grown using radio-frequency magnetron sputtering

Kuang Po Hsueh; Chao Yung Huang; Hsien Chin Chiu; Jinn Kong Sheu; Yu Hsiang Yeh

doi:10.1149/2.0011509jss

Effects of temperature on niobium-doped MgZnO films grown using radio-frequency magnetron sputtering

Kuang Po Hsueh, Chao Yung Huang, Hsien Chin Chiu, Jinn Kong Sheu, Yu Hsiang Yeh

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Niobium-doped Mg_xZn_1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates through radio-frequency (RF)magnetron sputtering using a 4-in ZnO/MgO/NbO_x (75/20/5 wt%) target. In this study, the films were analyzed using Hall measurements, X-ray diffraction (XRD), transparent performance measurements, and X-ray photoelectron spectroscopy (XPS). XRD results showed two peaks: MgO₂ (002)-wurtzite and Mg_xZn_1-xO (111)-cubic peaks. The Nb-MZO films exhibited high transparency, with transmittance exceeding 90% in the visible region and a sharp absorption edge in the ultraviolet (UV) region, implying that the MgO content in the Nb-MZO layer increased the bandgaps. These results indicate that Nb-MZO films are ideal for use as transparent contact layers in near-UV light-emitting diodes. Hall measurements and XPS results successfully demonstrated the p-type conductivity of the Nb-MZO films because of the composition of the N-Nb binding caused by annealing in nitrogen atmosphere.

Original language	English
Pages (from-to)	Q96-Q100
Journal	ECS Journal of Solid State Science and Technology
Volume	4
Issue number	8
DOIs	https://doi.org/10.1149/2.0011509jss
Publication status	Published - 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2.0011509jss

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title = "Effects of temperature on niobium-doped MgZnO films grown using radio-frequency magnetron sputtering",

abstract = "Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates through radio-frequency (RF)magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt%) target. In this study, the films were analyzed using Hall measurements, X-ray diffraction (XRD), transparent performance measurements, and X-ray photoelectron spectroscopy (XPS). XRD results showed two peaks: MgO2 (002)-wurtzite and MgxZn1-xO (111)-cubic peaks. The Nb-MZO films exhibited high transparency, with transmittance exceeding 90% in the visible region and a sharp absorption edge in the ultraviolet (UV) region, implying that the MgO content in the Nb-MZO layer increased the bandgaps. These results indicate that Nb-MZO films are ideal for use as transparent contact layers in near-UV light-emitting diodes. Hall measurements and XPS results successfully demonstrated the p-type conductivity of the Nb-MZO films because of the composition of the N-Nb binding caused by annealing in nitrogen atmosphere.",

author = "Hsueh, {Kuang Po} and Huang, {Chao Yung} and Chiu, {Hsien Chin} and Sheu, {Jinn Kong} and Yeh, {Yu Hsiang}",

year = "2015",

doi = "10.1149/2.0011509jss",

language = "English",

volume = "4",

pages = "Q96--Q100",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Effects of temperature on niobium-doped MgZnO films grown using radio-frequency magnetron sputtering

AU - Hsueh, Kuang Po

AU - Huang, Chao Yung

AU - Chiu, Hsien Chin

AU - Sheu, Jinn Kong

AU - Yeh, Yu Hsiang

PY - 2015

Y1 - 2015

N2 - Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates through radio-frequency (RF)magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt%) target. In this study, the films were analyzed using Hall measurements, X-ray diffraction (XRD), transparent performance measurements, and X-ray photoelectron spectroscopy (XPS). XRD results showed two peaks: MgO2 (002)-wurtzite and MgxZn1-xO (111)-cubic peaks. The Nb-MZO films exhibited high transparency, with transmittance exceeding 90% in the visible region and a sharp absorption edge in the ultraviolet (UV) region, implying that the MgO content in the Nb-MZO layer increased the bandgaps. These results indicate that Nb-MZO films are ideal for use as transparent contact layers in near-UV light-emitting diodes. Hall measurements and XPS results successfully demonstrated the p-type conductivity of the Nb-MZO films because of the composition of the N-Nb binding caused by annealing in nitrogen atmosphere.

AB - Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates through radio-frequency (RF)magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt%) target. In this study, the films were analyzed using Hall measurements, X-ray diffraction (XRD), transparent performance measurements, and X-ray photoelectron spectroscopy (XPS). XRD results showed two peaks: MgO2 (002)-wurtzite and MgxZn1-xO (111)-cubic peaks. The Nb-MZO films exhibited high transparency, with transmittance exceeding 90% in the visible region and a sharp absorption edge in the ultraviolet (UV) region, implying that the MgO content in the Nb-MZO layer increased the bandgaps. These results indicate that Nb-MZO films are ideal for use as transparent contact layers in near-UV light-emitting diodes. Hall measurements and XPS results successfully demonstrated the p-type conductivity of the Nb-MZO films because of the composition of the N-Nb binding caused by annealing in nitrogen atmosphere.

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Effects of temperature on niobium-doped MgZnO films grown using radio-frequency magnetron sputtering

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