Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

M. H. Liu, Y. H. Wang, M. P. Houng, J. F. Chen, A. Y. Cho

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of conservation of in-plane momentum and doping levels on the low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures are investigated. A three-band k · p model incorporating the coupling effects among electrons, heavy holes and light holes is used to calculate the tunneling current-voltage characteristics. It is found that the kink and the small peaks in the low-temperature characteristics are results of the conservation of in-plane momentum. With a 30 Å-thick InAs well, the low-temperature characteristics change from the ones with a shoulder at low doping levels to the ones with a kink at high doping levels. In addition, the peak current density decreases at high doping levels. With a 120 Å-thick InAs well, the peak current density increases with increasing doping levels. Besides, the small peaks at low and medium voltages and the main current peak become more significant at high doping levels. The detailed carrier transport can be interpreted with the tunneling factors and the conservation of the in-plane momentum.

Original languageEnglish
Pages (from-to)202-205
Number of pages4
JournalPhysica Scripta T
Volume69
Publication statusPublished - 1997 Dec 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures'. Together they form a unique fingerprint.

Cite this