Effects of the sapphire substrate thickness on the performances of GaN-based LEDs

K. T. Lam, S. C. Hung, C. F. Shen, C. H. Liu, Y. X. Sun, S. J. Chang

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

GaN-based light-emitting diodes (LEDs) prepared on sapphire substrates with different thicknesses were fabricated and characterized. By thinning the sapphire substrate to 50 μm, it was found that we can achieve a larger output power under high current injection without increasing the operating voltage. Life tests also indicate that the LEDs prepared on a thin sapphire substrate are more reliable.

Original languageEnglish
Article number065002
JournalSemiconductor Science and Technology
Volume24
Issue number6
DOIs
Publication statusPublished - 2009 Jun 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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