GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.
|Number of pages||7|
|Journal||IEE Proceedings I: Solid State and Electron Devices|
|Publication status||Published - 1987 Jan 1|
All Science Journal Classification (ASJC) codes