EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p + n - delta (p + )n - n + SWITCHING.

K. F. Yarn; Y. H. Wang; C. P. Liou; M. S. Jame; C. Y. Chang

doi:10.1049/ip-i-1.1987.0024

EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p⁺ n^- delta (p⁺ )n^- n⁺ SWITCHING.

K. F. Yarn, Y. H. Wang, C. P. Liou, M. S. Jame, C. Y. Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.

Original language	English
Pages (from-to)	129-135
Number of pages	7
Journal	IEE Proceedings I: Solid State and Electron Devices
Volume	134
Issue number	4
DOIs	https://doi.org/10.1049/ip-i-1.1987.0024
Publication status	Published - 1987

All Science Journal Classification (ASJC) codes

General Engineering

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10.1049/ip-i-1.1987.0024

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title = "EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p + n - delta (p + )n - n + SWITCHING.",

abstract = "GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.",

author = "Yarn, {K. F.} and Wang, {Y. H.} and Liou, {C. P.} and Jame, {M. S.} and Chang, {C. Y.}",

year = "1987",

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T1 - EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p + n - delta (p + )n - n + SWITCHING.

AU - Yarn, K. F.

AU - Wang, Y. H.

AU - Liou, C. P.

AU - Jame, M. S.

AU - Chang, C. Y.

PY - 1987

Y1 - 1987

N2 - GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.

AB - GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.

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JO - IEE Proceedings I: Solid State and Electron Devices

JF - IEE Proceedings I: Solid State and Electron Devices

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ER -

EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p⁺ n^- delta (p⁺ )n^- n⁺ SWITCHING.

Abstract

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