EFFECTS OF THE THIRD-ELECTRODE POSITIONS ON THREE-TERMINAL GaAs p + n - delta (p + )n - n + SWITCHING.

K. F. Yarn, Yeong-Her Wang, C. P. Liou, M. S. Jame, C. Y. Chang

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Abstract

GaAs p** plus n** minus delta )p** plus )n**31 n**30 3-terminal switching devices prepared by molecular beam epitaxy were fabricated. The positions of the third electrode are found to affect the device characteristics. The effect of 3rd-electrode positions with bias conditions are investigated. Control efficiency is defined to compare the device performance.

Original languageEnglish
Pages (from-to)129-135
Number of pages7
JournalIEE Proceedings I: Solid State and Electron Devices
Volume134
Issue number4
DOIs
Publication statusPublished - 1987 Jan 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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