Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride

C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh, G. C. Chi

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

In this study, Al-doped ZnO (AZO) and NiAZO films were deposited on p-type GaN films followed by thermal annealing to form ohmic contacts. After thermal annealing, the resistivities of AZO films reduced from 5× 10-3 to 4-6× 10-4 Ω cm. Both as-deposited AZO and NiAZO contacts on p-GaN displayed a non-ohmic characteristic. Only the 800°C-annealed NiAZO contacts exhibited a linear current-voltage characteristic, showing a specific contact resistance of around 1.2× 10-2 Ω cm2. After undergoing the annealing in nitrogen ambience, the light transmittance of the NiAZO films increased from 70% to higher than 90% in the visible range. These results revealed that the NiAZO contact can serve as a suitable transparent current spreading layer for the fabrication of GaN-based light-emitting devices.

Original languageEnglish
Pages (from-to)G296-G298
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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