Effects of thermal annealing on electrical, optical and structural properties of Ga-Doped ZnO films

P. C. Chang, K. H. Lee, A. N. Tu, S. J. Chang, K. L. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

Original languageEnglish
Title of host publicationTHERMEC 2009
EditorsTara Chandra, Tara Chandra, Tara Chandra, N. Wanderka, N. Wanderka, N. Wanderka, Walter Reimers, Walter Reimers, Walter Reimers, M. Ionescu, M. Ionescu, M. Ionescu
PublisherTrans Tech Publications Ltd
Pages2891-2896
Number of pages6
ISBN (Print)0878492941, 9780878492947
DOIs
Publication statusPublished - 2010 Jan 1
Event6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009 - Berlin, Germany
Duration: 2009 Aug 252009 Aug 29

Publication series

NameMaterials Science Forum
Volume638-642
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009
CountryGermany
CityBerlin
Period09-08-2509-08-29

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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