Effects of thermal annealing on In-induced metastable defects in InGaN films

H. Hung; K. T. Lam; S. J. Chang; H. Kuan; C. H. Chen; U. H. Liaw

doi:10.1016/j.mssp.2007.05.002

Effects of thermal annealing on In-induced metastable defects in InGaN films

H. Hung, K. T. Lam, S. J. Chang, H. Kuan, C. H. Chen, U. H. Liaw

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigated the effects of thermal annealing on the properties of InGaN layers. From secondary ion mass spectroscopy results, it was found that severe In desorption occurred after annealing. Photoluminescence and X-ray diffraction results indicate that significant amounts of In vacancy-related defects exist in the annealing samples. It was also found that persistent photoconductivity decay time constants were 211, 893 and 1040 s, while the decay exponents were 0.153, 0.120 and 0.213 for the as-grown, 800 °C-annealed and 1000 °C-annealed InGaN epitaxial layers, respectively.

Original language	English
Pages (from-to)	112-116
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	10
Issue number	2-3
DOIs	https://doi.org/10.1016/j.mssp.2007.05.002
Publication status	Published - 2007 Apr

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2007.05.002

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title = "Effects of thermal annealing on In-induced metastable defects in InGaN films",

abstract = "We investigated the effects of thermal annealing on the properties of InGaN layers. From secondary ion mass spectroscopy results, it was found that severe In desorption occurred after annealing. Photoluminescence and X-ray diffraction results indicate that significant amounts of In vacancy-related defects exist in the annealing samples. It was also found that persistent photoconductivity decay time constants were 211, 893 and 1040 s, while the decay exponents were 0.153, 0.120 and 0.213 for the as-grown, 800 °C-annealed and 1000 °C-annealed InGaN epitaxial layers, respectively.",

author = "H. Hung and Lam, {K. T.} and Chang, {S. J.} and H. Kuan and Chen, {C. H.} and Liaw, {U. H.}",

year = "2007",

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T1 - Effects of thermal annealing on In-induced metastable defects in InGaN films

AU - Hung, H.

AU - Lam, K. T.

AU - Chang, S. J.

AU - Kuan, H.

AU - Chen, C. H.

AU - Liaw, U. H.

PY - 2007/4

Y1 - 2007/4

N2 - We investigated the effects of thermal annealing on the properties of InGaN layers. From secondary ion mass spectroscopy results, it was found that severe In desorption occurred after annealing. Photoluminescence and X-ray diffraction results indicate that significant amounts of In vacancy-related defects exist in the annealing samples. It was also found that persistent photoconductivity decay time constants were 211, 893 and 1040 s, while the decay exponents were 0.153, 0.120 and 0.213 for the as-grown, 800 °C-annealed and 1000 °C-annealed InGaN epitaxial layers, respectively.

AB - We investigated the effects of thermal annealing on the properties of InGaN layers. From secondary ion mass spectroscopy results, it was found that severe In desorption occurred after annealing. Photoluminescence and X-ray diffraction results indicate that significant amounts of In vacancy-related defects exist in the annealing samples. It was also found that persistent photoconductivity decay time constants were 211, 893 and 1040 s, while the decay exponents were 0.153, 0.120 and 0.213 for the as-grown, 800 °C-annealed and 1000 °C-annealed InGaN epitaxial layers, respectively.

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U2 - 10.1016/j.mssp.2007.05.002

DO - 10.1016/j.mssp.2007.05.002

M3 - Article

AN - SCOPUS:34548455772

SN - 1369-8001

VL - 10

SP - 112

EP - 116

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 2-3

ER -

Effects of thermal annealing on In-induced metastable defects in InGaN films

Abstract

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