Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang

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149 Citations (Scopus)

Abstract

In this work indium tin oxide (ITO) films were prepared using electron beam evaporation to form Schottky contacts on n-type GaN films. The thermal stability of ITO on n-type GaN was also investigated by annealing the samples at various temperatures. In addition, current-voltage (I-V) measurements were taken to deduce the Schottky barrier heights. Owing to the large series resistance, the Norde method was used to plot the F(V)-V curves and the effective Schottky barrier heights were determined as well. The effective Schottky barrier heights were 0.68, 0.88, 0.94, and 0.95 eV for nonannealed, 400, 500, and 600°C annealed samples, respectively. Results presented herein indicate that an increase of the barrier heights may be attributed to the formation of an interfacial layer at the ITO/GaN interface after annealing.

Original languageEnglish
Pages (from-to)3317-3319
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number25
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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