Effects of Ti addition on the morphology, interfacial reaction, and diffusion of Cu on SiO2

C. J. Liu, J. S. Jeng, J. S. Chen, Y. K. Lin

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The morhological and interfacial characteristics of Cu/SiO2/<Si>, Cu(0.02 wt% Ti)/SiO2/<Si>, and Cu(2.98 wt% Ti)/SiO2/<Si> systems upon vacuum annealing were studied. It was found that the Cu(2.98 wt% Ti) film exhibits strong <111> texture, small grain size, and smooth surface after heat treatment.

Original languageEnglish
Pages (from-to)2361-2366
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - 2002 Nov 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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