Abstract
The effect of weak ordering on InGaPNGaAs heterostructure grown by gas source molecular-beam epitaxy is quantitatively studied by room-temperature Raman, photoluminescence (PL), and photoreflectance spectroscopy in this work. The PL intensity decreases rapidly as the nitrogen concentration increases, implying that more nonradiative centers are generated by the ordering effect and the degradation of the samples. The band gap of InGaPN decreases dramatically as the nitrogen is incorporated. The Raman modes of InGaPN between 130 and 1000 cm-1 are analyzed. Polarized Raman spectra reveal that the InGaPN layers become more ordered as more nitrogen is incorporated. A broad Raman structure that appeared around 730 cm-1 is attributed to an InGaN-like LO-phonon mode. The transition of the crystal structure from the zinc blende to CuPt structure and the formation of GaN clusters are responsible for the ordering effect in the InGaPN layer.
| Original language | English |
|---|---|
| Article number | 211914 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2005 May 23 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Effects of weak ordering of InGaPN. / Lin, K. I.; Lee, J. Y.; Wang, T. S.; Hsu, S. H.; Hwang, J. S.; Hong, Y. G.; Tu, C. W.
In: Applied Physics Letters, Vol. 86, No. 21, 211914, 23.05.2005, p. 1-3.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of weak ordering of InGaPN
AU - Lin, K. I.
AU - Lee, J. Y.
AU - Wang, T. S.
AU - Hsu, S. H.
AU - Hwang, J. S.
AU - Hong, Y. G.
AU - Tu, C. W.
PY - 2005/5/23
Y1 - 2005/5/23
N2 - The effect of weak ordering on InGaPNGaAs heterostructure grown by gas source molecular-beam epitaxy is quantitatively studied by room-temperature Raman, photoluminescence (PL), and photoreflectance spectroscopy in this work. The PL intensity decreases rapidly as the nitrogen concentration increases, implying that more nonradiative centers are generated by the ordering effect and the degradation of the samples. The band gap of InGaPN decreases dramatically as the nitrogen is incorporated. The Raman modes of InGaPN between 130 and 1000 cm-1 are analyzed. Polarized Raman spectra reveal that the InGaPN layers become more ordered as more nitrogen is incorporated. A broad Raman structure that appeared around 730 cm-1 is attributed to an InGaN-like LO-phonon mode. The transition of the crystal structure from the zinc blende to CuPt structure and the formation of GaN clusters are responsible for the ordering effect in the InGaPN layer.
AB - The effect of weak ordering on InGaPNGaAs heterostructure grown by gas source molecular-beam epitaxy is quantitatively studied by room-temperature Raman, photoluminescence (PL), and photoreflectance spectroscopy in this work. The PL intensity decreases rapidly as the nitrogen concentration increases, implying that more nonradiative centers are generated by the ordering effect and the degradation of the samples. The band gap of InGaPN decreases dramatically as the nitrogen is incorporated. The Raman modes of InGaPN between 130 and 1000 cm-1 are analyzed. Polarized Raman spectra reveal that the InGaPN layers become more ordered as more nitrogen is incorporated. A broad Raman structure that appeared around 730 cm-1 is attributed to an InGaN-like LO-phonon mode. The transition of the crystal structure from the zinc blende to CuPt structure and the formation of GaN clusters are responsible for the ordering effect in the InGaPN layer.
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U2 - 10.1063/1.1940118
DO - 10.1063/1.1940118
M3 - Article
AN - SCOPUS:20844463200
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 211914
ER -