Effects of Zr doping on the performance of solution-processed inzno thin-film transistors

Ssu Yin Liu, Bo Yuan Su, Po Ching Kao, Sheng Yuan Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages293-296
Number of pages4
Publication statusPublished - 2012 Dec 1
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 2012 Dec 42012 Dec 7

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
CountryJapan
CityKyoto
Period12-12-0412-12-07

Fingerprint

Thin film transistors
Doping (additives)
Zinc Oxide
Indium
Zinc oxide
Zirconium
Ions
indium oxide

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Liu, S. Y., Su, B. Y., Kao, P. C., & Chu, S. Y. (2012). Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 293-296). (Proceedings of the International Display Workshops; Vol. 1).
Liu, Ssu Yin ; Su, Bo Yuan ; Kao, Po Ching ; Chu, Sheng Yuan. / Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. pp. 293-296 (Proceedings of the International Display Workshops).
@inproceedings{4bc30f7eb0654b3a86f165d8909fe83d,
title = "Effects of Zr doping on the performance of solution-processed inzno thin-film transistors",
abstract = "Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90{\%} in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.",
author = "Liu, {Ssu Yin} and Su, {Bo Yuan} and Kao, {Po Ching} and Chu, {Sheng Yuan}",
year = "2012",
month = "12",
day = "1",
language = "English",
isbn = "9781627486521",
series = "Proceedings of the International Display Workshops",
pages = "293--296",
booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

}

Liu, SY, Su, BY, Kao, PC & Chu, SY 2012, Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 1, pp. 293-296, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 12-12-04.

Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. / Liu, Ssu Yin; Su, Bo Yuan; Kao, Po Ching; Chu, Sheng Yuan.

Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 293-296 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Effects of Zr doping on the performance of solution-processed inzno thin-film transistors

AU - Liu, Ssu Yin

AU - Su, Bo Yuan

AU - Kao, Po Ching

AU - Chu, Sheng Yuan

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.

AB - Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.

UR - http://www.scopus.com/inward/record.url?scp=84885895845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885895845&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84885895845

SN - 9781627486521

T3 - Proceedings of the International Display Workshops

SP - 293

EP - 296

BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

ER -

Liu SY, Su BY, Kao PC, Chu SY. Effects of Zr doping on the performance of solution-processed inzno thin-film transistors. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 293-296. (Proceedings of the International Display Workshops).