Abstract
Thin-film transistors with zirconium doping on the indium-zinc oxide as active layer by the solution-processed deposition method were fabricated and their TFT characteristics were examined. The solution-processed ZrInZnO films show high transmittance over 90% in the visible region and good electrical characteristic of Ion/Ioff ratio current over 10 5.
| Original language | English |
|---|---|
| Title of host publication | Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 |
| Pages | 293-296 |
| Number of pages | 4 |
| Publication status | Published - 2012 Dec 1 |
| Event | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 2012 Dec 4 → 2012 Dec 7 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 |
|---|---|
| Country/Territory | Japan |
| City | Kyoto |
| Period | 12-12-04 → 12-12-07 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
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