@article{41acf2a0d23d47c287da147f5e9e7843,
title = "Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering",
abstract = "In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequency (RF) applications. The HEMTs also demonstrated low initial vertical leakage current, high thermal stability, and smaller drain-lag with reduced leakage currents as compared to the devices using step-graded (SG) AlGaN buffer. Also, the device showed improved RF performances with higher f T and f max as compared to the devices with SG buffer.",
author = "Weng, {You Chen} and Hsu, {Heng Tung} and Tsao, {Yi Fan} and Debashis Panda and Huang, {Hsuan Yao} and Kao, {Min Lu} and Lan, {Yu Pin} and Chang, {Edward Yi} and Lee, {Ching Ting}",
note = "Funding Information: This work was financially supported by the “Center for the Semiconductor Technology Research” from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. Also supported in part by the Ministry of Science and Technology, Taiwan, under Grant No. NSTC-110-2622-8-A49-008-SB, NSTC-111–2622-8-A49-018-SB and NSTC-111-2634-F-A49-008. Publisher Copyright: {\textcopyright} 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.",
year = "2023",
month = mar,
doi = "10.1149/2162-8777/acbf72",
language = "English",
volume = "12",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "3",
}