Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng Huang Kuo; Y. K. Fu; G. C. Chi; Shoou Jinn Chang

doi:10.1109/JQE.2009.2031253

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Cheng Huang Kuo
, Y. K. Fu
, G. C. Chi
, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In_0.27Ga_0.73N layer. By inserting an In_0.08Ga_0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

Original language	English
Pages (from-to)	391-395
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	46
Issue number	3
DOIs	https://doi.org/10.1109/JQE.2009.2031253
Publication status	Published - 2010 Mar

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2009.2031253

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title = "Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step",

abstract = "GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.",

author = "Kuo, \{Cheng Huang\} and Fu, \{Y. K.\} and Chi, \{G. C.\} and Chang, \{Shoou Jinn\}",

year = "2010",

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doi = "10.1109/JQE.2009.2031253",

language = "English",

volume = "46",

pages = "391--395",

journal = "IEEE Journal of Quantum Electronics",

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T1 - Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

AU - Kuo, Cheng Huang

AU - Fu, Y. K.

AU - Chi, G. C.

AU - Chang, Shoou Jinn

PY - 2010/3

Y1 - 2010/3

N2 - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

AB - GaN-based asymmetric two-step light-emitting diodes (LEDs) with a low indium content (LIn) InGaN shallow step was proposed and fabricated. It was found the LIn-InGaN shallow step can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. By inserting an In0.08Ga0.92N shallow step, it was found that we can enhance LED output power by a factor of 2.27 with an injection current of 20 mA.

UR - https://www.scopus.com/pages/publications/85008046696

UR - https://www.scopus.com/pages/publications/85008046696#tab=citedBy

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SN - 0018-9197

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SP - 391

EP - 395

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Abstract

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