Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

Sheng Fu Yu; Ray Ming Lin; Shoou Jinn Chang; Fu Chuan Chu

doi:10.1143/APEX.5.022102

Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

Sheng Fu Yu, Ray Ming Lin, Shoou Jinn Chang, Fu Chuan Chu

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

Original language	English
Article number	022102
Journal	Applied Physics Express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1143/APEX.5.022102
Publication status	Published - 2012 Feb

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/APEX.5.022102

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abstract = "In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.",

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AB - In this study, we prepared InGaN-based light-emitting diodes (LEDs) with peak emissions ranging from 400 to 445nm and investigated their efficiency droop characteristics at injection currents of up to 1 A. We found that the external quantum efficiencies (EQEs) changed dramatically when the critical current increased from 0 to 350 mA, but exhibited a similar negative slope upon increasing the current from 350mA to 1 A. The effects of piezoelectric polarization and different localized states in the active layer of the near UV-to-blue LEDs influenced the peak EQEs and the dramatic decays of the EQE droops at lower injection currents.

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Efficiency droop characteristics in InGaN-based near ultraviolet-to-blue light-emitting diodes

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