Abstract
We report on the improvement of conversion efficiency of InGaN photovoltaic (PV) cells with inverted textured surface (ITS). InGaN PV cells with ITS showed short-circuit current density and conversion efficiency of 0.63 mA/cm2 and 1.01%, which are 68.17% and 73.33% higher than the characteristics of conventional InGaN PV cells, respectively. The improvement can be attributed to the reduction of both the shading effect of the electrode contact pad and surface reflection of the incident irradiation under one-sun air-mass 1.5-G illumination (100 mW/cm2).
| Original language | English |
|---|---|
| Article number | 7968376 |
| Pages (from-to) | 1304-1307 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 29 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2017 Aug 15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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