TY - JOUR
T1 - Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control
AU - Tsai, Sheng Chieh
AU - Li, Ming Jui
AU - Fang, Hsin Chiao
AU - Tu, Chia Hao
AU - Liu, Chuan Pu
N1 - Funding Information:
This work was financially supported by the National Science Council of Taiwan and Genesis Photonics Inc. (grant nos. 101-2221-E-006-131-MY3 ).
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/5/1
Y1 - 2018/5/1
N2 - A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 10 8 #/cm 2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.
AB - A facile method for fabricating blue light-emitting diodes (B-LEDs) with small embedded quantum dots (QDs) and enhanced light emission is demonstrated by tuning the temperature of the growing GaN capping layer to eliminate V-defects. As the growth temperature increases from 770 °C to 840 °C, not only does the density of the V-defects reduce from 4.12 ∗ 10 8 #/cm 2 nm to zero on a smooth surface, but the QDs also get smaller. Therefore, the growth mechanism of smaller QDs assisted by elimination of V-defects is discussed. Photoluminescence and electroluminescence results show that smaller embedded QDs can improve recombination efficiency, and thus achieve higher peak intensity with smaller peak broadening. Accordingly, the external quantum efficiency of the B-LEDs with smaller QDs is enhanced, leading to a 6.8% increase in light output power in lamp-form package LEDs.
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U2 - 10.1016/j.apsusc.2018.01.074
DO - 10.1016/j.apsusc.2018.01.074
M3 - Article
AN - SCOPUS:85041398165
VL - 439
SP - 1127
EP - 1132
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -