Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Chi Ming Tsai, Chia Sheng Chang, Zhibo Xu, Wen Pin Huang, Wei Chih Lai, Jong Shing Bow

Research output: Contribution to journalArticle

Abstract

We introduced strain-compensated thin-barrier indium gallium nitride (InGaN)/aluminum nitride (AlN)/gallium nitride (GaN) multiple quantum wells (MQWs) to replace thin-barrier InGaN/GaN MQWs. The AlN insert layers would effectively compensate the strain of the thin-barrier InGaN/GaN MQWs to improve the opto-electrical properties of light-emitting diodes (LEDs). The 120-mA light output power of thin-barrier InGaN/GaN MQW LEDs could be improved from 31.9mW to 35.3mW by introducing 20-s-growth AlN insert layers, possibly reaching almost the same 120-mA light output power of traditional thick-barrier InGaN/GaN MQWs. Moreover, the current dependent external quantum efficiency (EQE) of the thin-barrier InGaN/AlN/GaN MQW LEDs with 20-s-growth AlN insert layers also indicated the largest peak EQE, showing high efficiency in low current injection. The severe carrier overflow effect that degrades the light output efficiency of the thin-barrier InGaN/GaN MQW LED in high current injection can be suppressed by introducing thin-barrier InGaN/AlN/GaN MQW with 20-s-growth AlN insert layers.

Original languageEnglish
Pages (from-to)1207-1214
Number of pages8
JournalOSA Continuum
Volume2
Issue number4
DOIs
Publication statusPublished - 2019 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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