Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers

Chiu Sheng Ho, Ching Sung Lee, Wei Chou Hsu, Cheng Yung Lin, Ying Nan Lai, Ching Wu Wang

Research output: Contribution to journalLetter

5 Citations (Scopus)

Abstract

This letter reports efficiency improvements in single-heterojunction organic photovoltaic (OPV) cells exploiting different wide-bandgap electron-blocking layer (EBL) materials of N,N,NO',N' tetrakis(4-methoxyphenyl)- benzidine (MeO-TPD), Tris(phenypyrazole)iridium (Ir(ppz)3), or 4,4,4"-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA), respectively. The OPV structure consists of an indium-tin-oxide (ITO) anode, 4 nm m-MTDATA, 30 nm copper phthalocyanine (CuPc), 40 nm fullerene (C60), 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and a 100 nm Al cathode. Optimum device performances by insertion the EBL of m-MTDATA have been achieved, including short-circuit current density (JSC) of 7.26 mA/cm 2, open-circuit voltage (VOC) of 0.5 V, fill-factor (FF) of 43%, and power conversion efficiency (PCE) of 1.56% at an illumination intensity of 100 mW/cm2.

Original languageEnglish
Pages (from-to)101-103
Number of pages3
JournalSolid-State Electronics
Volume76
DOIs
Publication statusPublished - 2012 Oct

Fingerprint

Photovoltaic cells
photovoltaic cells
Heterojunctions
heterojunctions
insertion
Energy gap
Iridium
Electrons
volatile organic compounds
Open circuit voltage
Temperature programmed desorption
short circuit currents
Fullerenes
iridium
Tin oxides
open circuit voltage
Volatile organic compounds
Short circuit currents
indium oxides
Indium

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers",
abstract = "This letter reports efficiency improvements in single-heterojunction organic photovoltaic (OPV) cells exploiting different wide-bandgap electron-blocking layer (EBL) materials of N,N,NO',N' tetrakis(4-methoxyphenyl)- benzidine (MeO-TPD), Tris(phenypyrazole)iridium (Ir(ppz)3), or 4,4,4{"}-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA), respectively. The OPV structure consists of an indium-tin-oxide (ITO) anode, 4 nm m-MTDATA, 30 nm copper phthalocyanine (CuPc), 40 nm fullerene (C60), 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and a 100 nm Al cathode. Optimum device performances by insertion the EBL of m-MTDATA have been achieved, including short-circuit current density (JSC) of 7.26 mA/cm 2, open-circuit voltage (VOC) of 0.5 V, fill-factor (FF) of 43{\%}, and power conversion efficiency (PCE) of 1.56{\%} at an illumination intensity of 100 mW/cm2.",
author = "Ho, {Chiu Sheng} and Lee, {Ching Sung} and Hsu, {Wei Chou} and Lin, {Cheng Yung} and Lai, {Ying Nan} and Wang, {Ching Wu}",
year = "2012",
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Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers. / Ho, Chiu Sheng; Lee, Ching Sung; Hsu, Wei Chou; Lin, Cheng Yung; Lai, Ying Nan; Wang, Ching Wu.

In: Solid-State Electronics, Vol. 76, 10.2012, p. 101-103.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Efficiency improvements in single-heterojunction organic photovoltaic cells by insertion of wide-bandgap electron-blocking layers

AU - Ho, Chiu Sheng

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

AU - Lin, Cheng Yung

AU - Lai, Ying Nan

AU - Wang, Ching Wu

PY - 2012/10

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AB - This letter reports efficiency improvements in single-heterojunction organic photovoltaic (OPV) cells exploiting different wide-bandgap electron-blocking layer (EBL) materials of N,N,NO',N' tetrakis(4-methoxyphenyl)- benzidine (MeO-TPD), Tris(phenypyrazole)iridium (Ir(ppz)3), or 4,4,4"-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA), respectively. The OPV structure consists of an indium-tin-oxide (ITO) anode, 4 nm m-MTDATA, 30 nm copper phthalocyanine (CuPc), 40 nm fullerene (C60), 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and a 100 nm Al cathode. Optimum device performances by insertion the EBL of m-MTDATA have been achieved, including short-circuit current density (JSC) of 7.26 mA/cm 2, open-circuit voltage (VOC) of 0.5 V, fill-factor (FF) of 43%, and power conversion efficiency (PCE) of 1.56% at an illumination intensity of 100 mW/cm2.

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