TY - JOUR
T1 - Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination
AU - Wu, Ming Hsien
AU - Chang, Sheng Po
AU - Liao, Wen Yih
AU - Chu, Mu Tao
AU - Chang, Shoou Jinn
N1 - Funding Information:
The authors would like to thank the National Science Council and Bureau of Energy, Ministry of Economic Affairs of Taiwan, R.O.C. for the financial support under Contract no. 100-2221-E-006-168 and 101-D0204-6 and the LED Lighting Research Center of NCKU for the assistance of device characterization. This work was also supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, the National Cheng Kung University, Taiwan and by the Advanced Optoelectronic Technology Center, the National Cheng Kung University , under projects from the Ministry of Education.
PY - 2013/9/25
Y1 - 2013/9/25
N2 - In this study, GaN/InGaN double-heterojunction (DH) photovoltaic (PV) devices were fabricated and their theoretical PV properties were simulated. When the characteristics of PV devices were compared between illumination conditions of one sun and 120 suns, the PV properties - open-circuit voltage, short-circuit current density, and filling factor - measured in fabricated GaN/InGaN PV devices improved more than those calculated from the simulation. This result could be tentatively attributed to the trap-filling effect under a high injection density of photo-generated carriers, which would relatively reduce the series resistance and increase the shunt resistance. The improvements in the conversion efficiencies of the GaN/InGaN PV devices between illumination conditions of one sun and 120 suns were 4.6% and 70.8% for simulated and measured conversion efficiencies, respectively. The differences between the simulated results and measurements of actual GaN/InGaN PV devices are consistent.
AB - In this study, GaN/InGaN double-heterojunction (DH) photovoltaic (PV) devices were fabricated and their theoretical PV properties were simulated. When the characteristics of PV devices were compared between illumination conditions of one sun and 120 suns, the PV properties - open-circuit voltage, short-circuit current density, and filling factor - measured in fabricated GaN/InGaN PV devices improved more than those calculated from the simulation. This result could be tentatively attributed to the trap-filling effect under a high injection density of photo-generated carriers, which would relatively reduce the series resistance and increase the shunt resistance. The improvements in the conversion efficiencies of the GaN/InGaN PV devices between illumination conditions of one sun and 120 suns were 4.6% and 70.8% for simulated and measured conversion efficiencies, respectively. The differences between the simulated results and measurements of actual GaN/InGaN PV devices are consistent.
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U2 - 10.1016/j.surfcoat.2012.05.092
DO - 10.1016/j.surfcoat.2012.05.092
M3 - Article
AN - SCOPUS:84882867304
SN - 0257-8972
VL - 231
SP - 253
EP - 256
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -